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STGP10NB37LZ
STGP10NB37LZ | |
|---|---|
| Manufacturer Part Number | STGP10NB37LZ |
| Description | IGBT N-CHAN CLAMPED 20A TO-220 |
| Manufacturer | STMicroelectronics |
| Series | PowerMESH™ |
| STGP10NB37LZ datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
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Specifications of STGP10NB37LZ | |||
|---|---|---|---|
| Voltage - Collector Emitter Breakdown (max) | 440V | Vce(on) (max) @ Vge, Ic | 1.8V @ 4.5V, 10A |
| Current - Collector (ic) (max) | 20A | Power - Max | 125W |
| Input Type | Logic | Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) | Channel Type | N |
| Configuration | Single | Collector-emitter Voltage | 375V |
| Collector Current (dc) (max) | 20A | Gate To Emitter Voltage (max) | 12V |
| Package Type | TO-220 | Pin Count | 3 +Tab |
| Mounting | Through Hole | Operating Temperature (max) | 175C |
| Operating Temperature Classification | Military | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Igbt Type | - | Other names | 497-6732-5 STGP10NB37LZ |
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Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
J
Table 4.
Static
Symbol
Collector emitter clamped
V
(clamped)
CES
voltage (V
Emitter collector break-
V
(BR)ECS
down voltage (V
Gate emitter clamped
V
(clamped)
GE
voltage
Collector-emitter saturation
V
CE(sat)
voltage
V
Gate threshold voltage
GE(th)
Collector cut-off current
I
CES
(V
Gate-emitter leakage
I
GES
current (V
R
Gate emitter resistance
GE
g
Forward transconductance V
fs
Table 5.
Dynamic
Symbol
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer
C
res
capacitance
Q
Total gate charge
g
Table 6.
Functional characteristics
Symbol
Unclamped inductive
U.I.S.
switching current
4/15
Parameter
Test conditions
I
= 2 mA,
C
= 0)
T
= -40 °C to 150 °C
GE
J
I
= 75 mA
EC
= 0)
GE
I
= ± 2 mA
G
V
= 4.5 V, I
GE
V
= 4.5 V, I
GE
V
= V
CE
T
= -40 °C to 150 °C
J
V
= 15 V, T
CE
= 0)
V
= 200 V, T
GE
CE
V
= ±10 V
GE
= 0)
CE
= 25 V
CE
Parameter
Test conditions
V
= 25 V, f = 1 MHz,
CE
V
= 0
GE
V
= 328 V, I
CE
V
= 5 V,
GE
Figure
(see
Parameter
Test condition
R
GOFF
T
= 125 °C
J
Doc ID 7402 Rev 4
STGB10NB37LZ, STGP10NB37LZ
Min.
Typ.
380
410
18
12
= 10 A
1.2
C
= 20 A
1.3
C
, I
= 250 µA
GE
C
0.6
= 150 °C
J
=150 °C
J
20
I
= 20 A
18
,
C
Min.
Typ. Max.
1300
105
12
= 10 A,
C
28
18)
Min.
Typ. Max.
= 1 kΩ, L = 1 mH,
13
Max.
Unit
440
V
V
16
V
1.8
V
V
2.2
V
10
µA
100
µA
±700
µA
kΩ
S
Unit
pF
pF
pF
nC
Unit
A
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