IGBT N-CHAN CLAMPED 20A TO-220

 

STGP10NB37LZ

Manufacturer Part NumberSTGP10NB37LZ
DescriptionIGBT N-CHAN CLAMPED 20A TO-220
ManufacturerSTMicroelectronics
SeriesPowerMESH™
STGP10NB37LZ datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of STGP10NB37LZ

Voltage - Collector Emitter Breakdown (max)440VVce(on) (max) @ Vge, Ic1.8V @ 4.5V, 10A
Current - Collector (ic) (max)20APower - Max125W
Input TypeLogicMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Channel TypeN
ConfigurationSingleCollector-emitter Voltage375V
Collector Current (dc) (max)20AGate To Emitter Voltage (max)12V
Package TypeTO-220Pin Count3 +Tab
MountingThrough HoleOperating Temperature (max)175C
Operating Temperature ClassificationMilitaryLead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-Other names497-6732-5
STGP10NB37LZ
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
Page 4/15

Download datasheet (750Kb)Embed
PrevNext
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
J
Table 4.
Static
Symbol
Collector emitter clamped
V
(clamped)
CES
voltage (V
Emitter collector break-
V
(BR)ECS
down voltage (V
Gate emitter clamped
V
(clamped)
GE
voltage
Collector-emitter saturation
V
CE(sat)
voltage
V
Gate threshold voltage
GE(th)
Collector cut-off current
I
CES
(V
Gate-emitter leakage
I
GES
current (V
R
Gate emitter resistance
GE
g
Forward transconductance V
fs
Table 5.
Dynamic
Symbol
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer
C
res
capacitance
Q
Total gate charge
g
Table 6.
Functional characteristics
Symbol
Unclamped inductive
U.I.S.
switching current
4/15
Parameter
Test conditions
I
= 2 mA,
C
= 0)
T
= -40 °C to 150 °C
GE
J
I
= 75 mA
EC
= 0)
GE
I
= ± 2 mA
G
V
= 4.5 V, I
GE
V
= 4.5 V, I
GE
V
= V
CE
T
= -40 °C to 150 °C
J
V
= 15 V, T
CE
= 0)
V
= 200 V, T
GE
CE
V
= ±10 V
GE
= 0)
CE
= 25 V
CE
Parameter
Test conditions
V
= 25 V, f = 1 MHz,
CE
V
= 0
GE
V
= 328 V, I
CE
V
= 5 V,
GE
Figure
(see
Parameter
Test condition
R
GOFF
T
= 125 °C
J
Doc ID 7402 Rev 4
STGB10NB37LZ, STGP10NB37LZ
Min.
Typ.
380
410
18
12
= 10 A
1.2
C
= 20 A
1.3
C
, I
= 250 µA
GE
C
0.6
= 150 °C
J
=150 °C
J
20
I
= 20 A
18
,
C
Min.
Typ. Max.
1300
105
12
= 10 A,
C
28
18)
Min.
Typ. Max.
= 1 kΩ, L = 1 mH,
13
Max.
Unit
440
V
V
16
V
1.8
V
V
2.2
V
10
µA
100
µA
±700
µA
kΩ
S
Unit
pF
pF
pF
nC
Unit
A