IRGB4062DPBF International Rectifier, IRGB4062DPBF Datasheet

IGBT ULT FAST DIO 600V TO-220AB

IRGB4062DPBF

Manufacturer Part Number
IRGB4062DPBF
Description
IGBT ULT FAST DIO 600V TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRGB4062DPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.95V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
48A
Collector Emitter Voltage Vces
1.65V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
48A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGB4062DPBF
Manufacturer:
INFINEON
Quantity:
5 000
Company:
Part Number:
IRGB4062DPBF
Quantity:
2 400
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
1
Features
• Low V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Absolute Maximum Ratings
V
I
I
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
R
R
R
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θJC
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature co-efficient
LM
GE
Parameter
Parameter
= 15V
e
GE
= 20V
G
n-channel
Gate
C
G
C
E
TO-220AB
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
–––
–––
IRGB4062DPbF
IRGP4062DPbF
G
C
10 lbf·in (1.1 N·m)
Collector
E
-55 to +175
C
t
SC
Max.
Typ.
0.50
±20
±30
600
250
125
–––
–––
–––
–––
C
48
24
72
96
48
24
96
80
I
V
C
≥ 5µs, T
TO-247AC
CE(on)
= 24A, T
V
CES
G
Emitter
typ. = 1.65V
Max.
C
0.60
1.53
0.65
1.62
–––
–––
J(max)
= 600V
E
E
C
= 100°C
www.irf.com
= 175°C
Units
Units
04/02/09
°C/W
°C
W
V
A
V

Related parts for IRGB4062DPBF

IRGB4062DPBF Summary of contents

Page 1

... Thermal Resistance Junction-to-Case-(each Diode) TO-247AC θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel C G Gate Parameter = 15V GE = 20V GE e Parameter IRGB4062DPbF IRGP4062DPbF V = 600V CES I = 24A 100° ≥ 5µ 175°C SC J(max) V typ. = 1.65V CE(on ...

Page 2

IRGB/P4062DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 ...

Page 4

IRGB/P4062DPbF 18V 80 VGE = 15V 70 VGE = 12V VGE = 10V 60 VGE = 8. (V) Fig Typ. IGBT ...

Page 5

E OFF 1000 800 E ON 600 400 200 (A) Fig Typ. Energy Loss vs 175° 200µ 400V ...

Page 6

IRGB/P4062DPbF 500 di F /dt (A/µs) Fig Typ. Diode 400V 15V 24A 1000 800 ...

Page 7

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB 0.50 0.20 0.10 0.1 0.05 0.02 ...

Page 8

IRGB/P4062DPbF 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL ...

Page 9

Fig.C.T.1 - Gate Charge Circuit (turn-off) 4x DUT Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com clamp / DU T ...

Page 10

IRGB/P4062DPbF 600 tf 500 90 400 I CE 300 C 200 100 Loss OFF -100 -0.40 0.10 0.60 Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C ...

Page 11

TO-220AB package is not recommended for Surface Mount Application. www.irf.com IRGB/P4062DPbF 11 ...

Page 12

IRGB/P4062DPbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 12 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. This ...

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