IXGH15N120BD1 IXYS, IXGH15N120BD1 Datasheet

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IXGH15N120BD1

Manufacturer Part Number
IXGH15N120BD1
Description
IGBT 30A 1200V TO-247AD
Manufacturer
IXYS
Datasheet

Specifications of IXGH15N120BD1

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
30
Ic90, Tc=90°c, Igbt, (a)
15
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.5
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
15
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH15N120BD1
Manufacturer:
NXP
Quantity:
1 450
Preliminary data
© 2000 IXYS All rights reserved
Low V
High Speed IGBT with Diode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
d
GE(th)
CE(sat)
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque
Test Conditions
I
I
V
V
V
I
Note 2
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
IGBT with Diode
= 1 A, V
= 250 mA, V
= V
= 0 V
= 0 V, V
= I
C90,
CES
V
J
GE
GE
GE
= 125°C, R
= 0 V
= ±20 V
= 15 V
CE
= V
GE
GE
G
= 1 MW
= 10 W
T
T
15N120BD1
15N120CD1
J
J
TO-247AD/TO-268
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
2
1200
1200
= 40
±20
±30
150
150
300
260
6/4
CES
30
15
60
max.
±100
500
5.0
3.2
3.8
mA
°C
°C
°C
°C
°C
mA
nA
W
V
V
V
V
V
A
A
A
A
g
V
V
V
TO-268
(IXGT)
G = Gate
E = Emitter
Features
• International standard packages:
• IGBT and anti-parallel FRED in one
• MOS Gate turn-on
• Fast Recovery Expitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Saves space (two devices in one
• Easy to mount with 1 screw
• Reduces assembly time and cost
TO-247AD
(IXGH)
JEDEC TO-247AD & TO-268
package
- drive simplicity
- soft recovery with low I
package)
power supplies
(isolated mounting screw hole)
1200 V 30 A
1200 V 30 A
G
V
C
DSS
E
G
C = Collector
TAB = Collector
E
I
C25
RM
C (TAB)
98658A (7/00)
V
3.2 V
3.8 V
CE(sat)
TAB
1 - 2

Related parts for IXGH15N120BD1

IXGH15N120BD1 Summary of contents

Page 1

... V CES CE CES ± GES CE(sat) C C90, GE Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± @0.8 V CES 150 -55 ... +150 150 -55 ... +150 1 ...

Page 2

... 200 = 30 V (Clamp) > 0.8 • CES . G IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGT 15N120BD1 IXGT 15N120CD1 TO-247 AD (IXGH) Outline Dim. Millimeter nC Min. Max ...

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