IRG4PC40WPBF International Rectifier, IRG4PC40WPBF Datasheet

IGBT WARP 600V 40A TO247AC

IRG4PC40WPBF

Manufacturer Part Number
IRG4PC40WPBF
Description
IGBT WARP 600V 40A TO247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PC40WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PC40WPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC40WPBF
Manufacturer:
MITSUBISHI
Quantity:
9 000
Part Number:
IRG4PC40WPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRG4PC40WPBF
Quantity:
4 500
Company:
Part Number:
IRG4PC40WPBF
Quantity:
12 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and constructionoffers
• Lead-Free
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
www.irf.com
C
C
CM
LM
operation than power MOSFETs up to 150 kHz
Supply and PFC (power factor correction)
("hard switched" mode)
resonant mode switching as well (up to >>300 kHz)
efficiency of all power supply topologies
boost PFC topologies 150W and higher
recombination make these an excellent option for
tighter parameters distribution, exceptional reliability
ARV
J
STG
θJC
θCS
θJA
applications
CES
GE
D
D
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
IRG4PC40WPbF
300 (0.063 in. (1.6mm) from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
TO-247AC
Max.
± 20
600
160
160
160
160
40
20
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
40
CES
= 15V, I
PD -95183
= 600V
= 2.05V
C
= 20A
Units
g (oz)
Units
°C/W
04/23/04
mJ
W
°C
V
A
V
1

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IRG4PC40WPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PC40WPbF C V CES V CE(on) typ 15V n-channel TO-247AC Max. 600 40 20 160 160 ± ...

Page 2

... IRG4PC40WPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 5° ° riv ifie tio Frequency (kH z) (Load Current = I of fundamental) RMS 1000 100  T = 150 ° 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4PC40WPbF Tria °  ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4PC40WPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.5 2.0 1.5 1.0 125 ...

Page 5

... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - (Ω) Fig Typical Switching Losses vs. IRG4PC40WPbF = 400V = 20A Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 10Ohm = 15V = 480V  100 120 140 160 T , Junction Temperature ( C ) ° ...

Page 6

... IRG4PC40WPbF 2.0  Ω 10Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000  V = 20V 125 C J 100  SAFE OPERATING AREA 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4PC40WPbF 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PC40WPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRFPE30 WIT LOT CODE 5657 35, 2000 LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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