IXGH15N120B2D1 IXYS, IXGH15N120B2D1 Datasheet
IXGH15N120B2D1
Manufacturer Part Number
IXGH15N120B2D1
Description
IGBT 30A 1200V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH15N120B2D1.pdf
(2 pages)
Specifications of IXGH15N120B2D1
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
192W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
30
Ic90, Tc=90°c, Igbt, (a)
15
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
137
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.8
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
1.60
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH15N120B2D1
Manufacturer:
IXYS
Quantity:
13 400
Symbol
(T
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
CES
GES
© 2005 IXYS All rights reserved
HiPerFAST
Optimized for 10-20 KHz hard
switching and up to 100 KHz
resonant switching
CM
C25
C90
GE(th)
CE(sat)
J
JM
stg
CGR
GEM
C
CES
GES
d
J
CES
= 25°C, unless otherwise specified)
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (TO-247)
C
C
C
GE
CE
C
C
C
C
CE
J
J
GE
= 250 μA, V
= 250 μA, V
= 0 V
= 0 V, V
= I
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
CE90
CES
, V
GE
GE
TM
= ±20 V
VJ
= 15
GE
CE
= 125°C, R
= V
= 0 V
IGBT
GE
GE
= 1 MΩ
G
Advance Technical Information
= 10 Ω
TO-247AD / TO-268
T
T
T
J
J
J
= 25°C
= 125°C
= 125°C
IXGH15N120B2D1
IXGT15N120B2D1
1200
Min.
Maximum Ratings
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Typ.
2.7
1.13/10 Nm/lb.in.
I
CM
1200
1200
= 40
6 / 4
±20
±30
192
150
300
260
30
15
60
CES
±100
Max.
100
5.0
3.5
3.3
mA
°C
°C
μA
nA
°C
°C
°C
W
g
V
V
V
V
V
V
V
V
A
A
A
A
V
I
V
t
Features
Applications
Advantages
TO-268
(IXGT)
G = Gate
E = Emitter
TO-247AD
(IXGH)
C25
fi(typ)
International standard packages:
JEDEC TO-247AD & TO-268
IGBT and anti-parallel FRED in one
package
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
Saves space (two devices in one
package)
CES
CE(sat)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
G
C
E
G
=1200 V
=
= 3.3
= 137 ns
C = Collector
TAB = Collector
E
30 A
DS99492(09/05)
RM
C (TAB)
TAB
V
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IXGH15N120B2D1 Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C CE90 GE © 2005 IXYS All rights reserved Advance Technical Information IXGH15N120B2D1 IXGT15N120B2D1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± Ω 0.8 V CES 192 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 260 TO-247AD / TO-268 Characteristic Values Min. ...
Page 2
... -di /dt = 100 A/μ 100° thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ 1700 0 CES Ω 165 137 , CES 1 0.60 260 305 ...