IXGH20N60BD1 IXYS, IXGH20N60BD1 Datasheet

IGBT 40A 600V TO-247AD

IXGH20N60BD1

Manufacturer Part Number
IXGH20N60BD1
Description
IGBT 40A 600V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH20N60BD1

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
20
Rthjc, Max, Diode, (ºc/w)
1
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH20N60BD1
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
HiPerFAST
with Diode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3) TO-247AD
TO-247AD
TO-268
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
VJ
CES
= 125°C, R
= 15 V
= ±20 V
GE
CE
IGBT
= 0 V
= V
GE
GE
= 1 MW
G
= 22 W
T
T
J
J
(T
= 25°C
= 150°C
J
= 25°C, unless otherwise specified)
IXGH 20N60BD1
IXGT 20N60BD1
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
1.7
CM
= 40
600
600
±20
±30
150
150
300
CES
40
20
80
6
4
max.
±100
200
5.5
2.0
3 mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
g
TO-268
(IXGT)
TO-247 AD
(IXGH)
G = Gate,
E = Emitter,
Features
• International standard packages
• High frequency IGBT and antiparallel
• High current handling capability
• HiPerFAST
• MOS Gate turn-on
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Space savings (two devices in one
• High power density
• Suitable for surface mounting
• Very low switching losses for high
• Easy to mount with 1 screw,TO-247
V
I
V
t
C25
fi(typ)
FRED in one package
-drive simplicity
power supplies
package)
frequency applications
(insulated mounting screw hole)
CES
CE(sat)typ
G
G
C
TM
E
= 600 V
= 40
= 1.7
= 100 ns
HDMOS
C = Collector,
TAB = Collector
E
TM
process
98566A (3/99)
V
A
C (TAB)
C (TAB)
1 - 2

Related parts for IXGH20N60BD1

IXGH20N60BD1 Summary of contents

Page 1

... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 20N60BD1 IXGT 20N60BD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1 ...

Page 2

... T = 150° 25° =100°C 100 25° Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 20N60BD1 IXGT 20N60BD1 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. ...

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