IXGH24N60CD1 IXYS, IXGH24N60CD1 Datasheet
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Manufacturer Part Number
IXGH24N60CD1
Description
IGBT 48A 600V TO-247AD
Specifications of IXGH24N60CD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
48A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
48 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
48
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
24
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.1
Tfi, Typ, Tj=25°c, Igbt, (ns)
60
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.6
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
24
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Part Number:
IXGH24N60CD1
© 2000 IXYS All rights reserved
HiPerFAST
with Diode
Lightspeed Series
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C110
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 750 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C110
, V
TM
GE
VJ
CES
GE
= 125°C, R
= ±20 V
= 15 V
GE
CE
IGBT
= 0 V
= V
GE
GE
= 1 MW
G
= 22 W
T
T
J
J
(T
= 25°C
= 150°C
J
= 25°C, unless otherwise specified)
IXGH 24N60CD1 V
IXGT 24N60CD1
TO-247
TO-268
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.1
I
1.13/10 Nm/lb.in.
CM
= 48
600
600
±20
±30
150
150
300
48
24
80
CES
max.
±100
6
4
200
5.5
2.5
3
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
g
V
TO-247 AD
(IXGH)
Features
• International standard packages
• High frequency IGBT
• High current handling capability
• Latest generation HDMOS
• MOS Gate turn-on
• Fast recovery expitaxial Diode (FRED)
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
G = Gate,
E = Emitter,
TO-268
(IXGT)
I
JEDEC TO-247 and surface
mountable TO-268
- drive simplicity
- soft recovery with low I
power supplies
frequency applications
C25
CES
CE(sat)
G
G
C
=
= 600 V
= 2.5 V
E
C = Collector,
TAB = Collector
E
48 A
RM
98603A (4/99)
TM
C (TAB)
process
C (TAB)
1 - 5
Related parts for IXGH24N60CD1
IXGH24N60CD1 Summary of contents
... V = 0.8 • V CES CE CES ± GES CE(sat) C C110 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 24N60CD1 V IXGT 24N60CD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1 ...
... J min. typ 150° 25° 100°C 100 25° Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 24N60CD1 IXGT 24N60CD1 TO-247 AD (IXGH) Outline Dim. Millimeter ns Min. Max. ...
... 125°C 13V Volts CE Fig. 3 Saturation Voltage Characteristics 10V 125° Volts GE Fig. 5 Admittance Curves © 2000 IXYS All rights reserved 11V 11V 1000 T = 25° IXGH 24N60CD1 IXGT 24N60CD1 200 25°C J 160 120 Volts CE Fig. 2 Extended Output Characteristics 1.4 ...
... Q - nanocoulombs g Fig.9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 Fig. 11 IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 2.0 2.0 1.5 1.5 1.0 1.0 E (OFF) 0.5 0.5 0.0 0 and OFF C 100 ...
... T VJ Fig. 15 Dynamic parameters Q , and r I versus T temperature K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 1000 T = 100° 300V R 800 I = 60A 30A 15A F 600 400 200 ...
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