IRG4PH50UDPBF International Rectifier, IRG4PH50UDPBF Datasheet
IRG4PH50UDPBF
Specifications of IRG4PH50UDPBF
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IRG4PH50UDPBF Summary of contents
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... Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH50UDPbF G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– ...
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... IRG4PH50UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Load Current vs. Frequency 1000 100 T = 150 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4PH50UDPbF 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 T = 150 15V Fig Typical Transfer Characteristics ° ° C sink riv ifie d ...
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... IRG4PH50UDPbF 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.5 3.0 2.5 2.0 125 ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 5. 480V 15V GE ° 24A I = 25A 4.60 C 4.20 3.80 3.40 3. Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PH50UDPbF SHORTED 100 0 Fig Typical Gate Charge vs. 100 R = Ohm 15V 800V -60 -40 - Ω Fig Typical Switching Losses vs. ...
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... IRG4PH50UDPbF 15 Ω Ohm 5 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 V T 100 150° 125° 25° 0.0 2.0 4.0 6.0 F orward V oltage D rop - 20V GE = 125 C ...
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... V = 200V 125° 25° / /µ Fig Typical Reverse Recovery vs 200V 125° 25° 8. / /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PH50UDPbF 200 125° 25° Fig Typical Recovery Current vs 200V T = 125° 25° /dt Fig Typical . / /µ /µ /dt vs. di /dt (rec)M ...
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... IRG4PH50UDPbF Same ty pe device as D .U.T. 430µF 80% of Vce D .U .T. Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 90% 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining ...
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... Figure 18e. Macro Waveforms for 50V µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com IRG4PH50UDPbF Figure 18a's D.U. 800V Figure 20. Pulsed Collector Current Test Circuit 800V @25°C C Test Circuit 9 ...
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... IRG4PH50UDPbF Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...