IXGX50N60B2D1 IXYS, IXGX50N60B2D1 Datasheet
IXGX50N60B2D1
Specifications of IXGX50N60B2D1
Related parts for IXGX50N60B2D1
IXGX50N60B2D1 Summary of contents
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... V GE(th CES CE CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGK 50N60B2D1 IXGX 50N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ 600 V CE 400 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in 300 ...
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... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3 80A C 2.8 40A 20A 2.5 2.2 1.9 1.6 1 Volts G E © 2004 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 320 9V 280 240 7V 200 160 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1 ...
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... GE 500 V = 480V 40A 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4.5 3.5 2.5 1.5 0.5 C 3.5 2.5 1 25º 400 350 ...
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... Q - nanoCoulombs G 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved I = 20A 40A 105 115 125 10000 1000 100 90 120 150 Fig. 17. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGK 50N60B2D1 IXGX 50N60B2D1 Fig. 14. Reverse -Bias Safe Operating Are a ...
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... K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4000 T = 100° 300V nC R ...