IXDH20N120D1 IXYS, IXDH20N120D1 Datasheet
IXDH20N120D1
Manufacturer Part Number
IXDH20N120D1
Description
IGBT NPT 1200V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXDH20N120.pdf
(4 pages)
Specifications of IXDH20N120D1
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
38A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
38
Ic90, Tc=90°c, Igbt, (a)
25
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.0
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.4
Rthjc, Max, Igbt, (°c/w)
0.63
If, Tc=90°c, Diode, (a)
19
Rthjc, Max, Diode, (k/w)
1.6
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
I
I
RBSOA
t
(SCSOA)
P
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
© 2004 IXYS All rights reserved
Symbol
V
V
I
I
V
C25
C90
CM
SC
CES
GES
J
stg
CES
CGR
GES
GEM
C
d
(BR)CES
GE(th)
CE(sat)
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 µH
V
R
T
Mounting torque
Conditions
V
I
V
V
I
C
C
J
J
C
C
C
C
GE
GE
G
GE
CE
CE
= 0.6 mA, V
= 20 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, t
= 25°C
= 82 Ω, non repetitive
= ±15 V, T
= ±15 V, V
= V
= 0 V, V
= 0 V
CES
p
GE
GE
= 1 ms
CE
= 15 V
J
CE
= ± 20 V
= 125°C, R
= V
= V
GE
CES
IGBT
Diode
T
T
GE
J
J
, T
= 25°C
= 125°C
= 20 kΩ
J
G
= 125°C
= 82 Ω
(T
J
= 25°C, unless otherwise specified)
G
IXDH 20N120
IXDH 20N120
IXDH 20N120 D1
1200
min.
4.5
-40< ... +150
Characteristic Values
E
C
-55 ... +150
V
CEK
Maximum Ratings
0.8 - 1.2
I
typ.
CM
2.4
< V
2
IXDH 20N120 D1
1200
1200
= 35
±20
±30
200
300
G
CES
38
25
50
10
75
6
max.
± 500 nA
6.5
1 mA
3
E
C
Nm
mA
°C
µs
°C
°C
W
W
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
TO-247 AD
G = Gate,
C = Collector ,
Features
●
●
●
●
●
●
●
●
●
Advantages
●
●
Typical Applications
●
●
●
●
●
C25
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
High power density
G
CES
CE(sat) typ
C
E
= 1200 V
= 38 A
= 2.4 V
E = Emitter
TAB = Collector
C (TAB)
1 - 4
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IXDH20N120D1 Summary of contents
Page 1
... (BR)CES 0.6 mA GE(th CES CE CES ± GES CE(sat © 2004 IXYS All rights reserved IXDH 20N120 IXDH 20N120 IXDH 20N120 IXDH 20N120 D1 Maximum Ratings 1200 = 20 kΩ 1200 GE ±20 ± Ω < V CEK CES , T = 125° 200 75 -55 ... +150 -40< ... +150 300 0 ...
Page 2
... L1 4. ∅P 3.55 3. 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1.6 K/W © 2004 IXYS All rights reserved Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 ...
Page 3
... Fig. 4 Typ. forward characteristics of free wheeling diode (D1 version only 100 200 300 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode (D1 version only) =17V 15V 13V 11V 9V 3 25°C J 3.0 V 400 ns t 300 rr 200 T = 125°C J 100 V = 600V 20A F IXDH20N120D1 0 A/µs 400 ...
Page 4
... Fig. 12 Typ. transient thermal impedance © 2004 IXYS All rights reserved 500 t d(off off 400 t 300 V = 600V ±15V GE 200 R = 82Ω 125°C J 100 1600 E off ns t d(off) 1200 t 800 400 Ω 300 350 IXDH20N120D1 0 ...