IXGH25N120A IXYS, IXGH25N120A Datasheet
IXGH25N120A
Manufacturer Part Number
IXGH25N120A
Description
IGBT 50A 1200V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXGH25N120A.pdf
(2 pages)
Specifications of IXGH25N120A
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH25N120A
Manufacturer:
IXYS
Quantity:
18 000
Low V
High speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
© 1996 IXYS All rights reserved
CES
C25
C90
CM
GES
CES
CGR
GES
GEM
C
J
JM
stg
GE(th)
CE(sat)
d
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 H
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 3 mA, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
VJ
GE
CES
GE
= 15 V
= 125 C, R
= 20 V
CE
= 0 V
= V
GE
GE
= 1 M
G
= 33
T
T
25N120
25N120A
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
1200
IXGH 25 N120
IXGH 25 N120A
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
1200
1200
= 50
100
200
150
300
CES
20
30
50
25
6
max.
250
100
6
1
3
4
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
V
g
C
C
C
C
A
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
Advantages
International standard package
JEDEC TO-247 AD
2nd generation HDMOS
Low V
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge systems
Solid state relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
1200 V 50 A
1200 V 50 A
V
G
CES
C
CE(sat)
E
C = Collector,
TAB = Collector
I
C25
TM
process
92783D (3/96)
V
3 V
4 V
CE(sat)
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IXGH25N120A Summary of contents
Page 1
... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH 25 N120 IXGH 25 N120A Maximum Ratings 1200 = 1 M 1200 100 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min. typ. ...
Page 2
... higher T or increased R off J R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ 2750 200 ...