IXGK50N60C2D1 IXYS, IXGK50N60C2D1 Datasheet
IXGK50N60C2D1
Specifications of IXGK50N60C2D1
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IXGK50N60C2D1 Summary of contents
Page 1
... V GE(th CES CE CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved IXGK 50N60C2D1 IXGX 50N60C2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600 V CE 480 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in 300 Characteristic Values (T = 25° ...
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... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.8 4.5 4 80A C 3.9 40A 20A 3.6 3.3 3 2.7 2 Volts G E © 2004 IXYS All rights reserved 320 9V 280 240 7V 200 160 6V 120 2.5 3 3.5 4 1.2 9V 1.1 7V 1.0 0.9 6V 0.8 0.7 0.6 5V 0.5 2 ...
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... 15V 480V 300 CE 250 200 150 I = 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 c 2.4 2.1 1.8 1.5 1.2 0 25ºC 0 200 ...
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... V = 300V 40A 10mA nanoCoulombs G 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 110 100 80A 20A 105 115 125 100 10000 1000 100 10 90 120 150 Fig. 16. Maxim um Transient The rm al Resistance 10 Pulse Width - milliseconds ...
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... T VJ Fig. 20. Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 ...