IRG7PH35UD1PBF International Rectifier, IRG7PH35UD1PBF Datasheet

IGBT N-CH 1200V 50A TO-247

IRG7PH35UD1PBF

Manufacturer Part Number
IRG7PH35UD1PBF
Description
IGBT N-CH 1200V 50A TO-247
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH35UD1PBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 20A
Current - Collector (ic) (max)
50A
Power - Max
179W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
1.9V
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Package
TO-247
Circuit
Co-Pack
Switching
Soft
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
50
Ic @ 100c (a)
25
Vce(on)@25c Typ (v)
1.90
Vce(on)@25c Max (v)
2.20
Ets Typ (mj)
1.68
Ets Max (mj)
2.15
Vf Typ
1.15
Pd @25c (w)
179
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG7PH35UD1PBF
Quantity:
5 000
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Benefits
• Device optimized for induction heating and soft switching
• High Efficiency due to Low V
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
1
Features
• Low V
• Low Switching Losses
• Square RBSOA
• Ultra-Low V
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for I
• Positive V
• Tight Parameter Distribution
• Lead Free Package
V
I
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
C
C
NOMINAL
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
and Ultra-low V
@ T
@ T
applications
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
F
Diode
trench IGBT Technology
F
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature Co-Efficient
CE(on)
LM

, low switching losses
GE
=15V
Parameter
Parameter
d
GE
=20V
c
g
g
G
n-channel
C
E
Min.
300 (0.063 in. (1.6mm) from case)
IRG7PH35UD1PbF
–––
–––
–––
–––
Gate
G
C
IRG7PH35UD1PbF
TO-247AC
IRG7PH35UD1-EP
10 lbf·in (1.1 N·m)
-55 to +150
G C
Max.
Typ.
1200
0.24
±30
179
–––
–––
50
25
20
60
80
50
25
80
71
40
E
Collector
V
T
CE(on)
V
I
C
J(max)
NOMINAL
CES
IRG7PH35UD1-EP
Max.
0.70
1.35
typ. = 1.9V
–––
–––
= 1200V
= 150°C
C
TO-247AD
= 20A
www.irf.com
Emitter
PD - 97455
G C
02/09/2010
E
Units
Units
°C/W
°C
W
V
A
V
E

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IRG7PH35UD1PBF Summary of contents

Page 1

... Parameter g g IRG7PH35UD1PbF IRG7PH35UD1- 1200V CES I = 20A NOMINAL T = 150°C J(max typ. = 1.9V CE(on TO-247AC TO-247AD IRG7PH35UD1PbF IRG7PH35UD1- Gate Collector Max. 1200 ±30 179 71 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. Max. ––– ...

Page 2

... IRG7PH35UD1PbF/IRG7PH35UD1-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Repetitive Transient Collector-to-Emitter Voltage (BR)Transient ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current CES ...

Page 3

... Temperature (°C) Fig Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature (V) Fig Typ. IGBT Output Characteristics T = -40° 30µs J www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP 125 150 1000 600µA 125 150 18V 15V 12V 10V 8. Fig Typ. IGBT Output Characteristics 200 175 150 125 100 ...

Page 4

... IRG7PH35UD1PbF/IRG7PH35UD1- (V) Fig Typ. IGBT Output Characteristics T = 150° 30µ 10A 20A 40A (V) Fig Typical -40° (V) Fig Typical 150° 18V 15V 12V 10V 8. vs 10A 20A 40A 25°C 30 150° 0.0 0.5 1.0 1 (V) Fig Typ. Diode Forward Voltage Drop ...

Page 5

... Fig Typ. Energy Loss vs 150° 680µ 600V 10000 Cies 1000 100 Coes Cres 10 0 100 200 300 V CE (V) Fig Typ. Capacitance vs 0V 1MHz GE www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1- 10Ω 15V T = 150° 680µ 10000 75 100 125 150° 680µ 20A 15V J CE ...

Page 6

... IRG7PH35UD1PbF/IRG7PH35UD1- 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1- VCC G force VCC 800 tf 700 600 90% I 500 CE 400 300 200 100 0 Eof f Loss -100 -0.5 0 0.5 1 1.5 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 150° ...

Page 8

... IRG7PH35UD1PbF/IRG7PH35UD1-EP TO-247AC package is not recommended for Surface Mount Application. 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & www.irf.com ...

Page 9

... TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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