IXEH40N120 IXYS, IXEH40N120 Datasheet
IXEH40N120
Manufacturer Part Number
IXEH40N120
Description
IGBT NPT3 SGL 1200V 60A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXEH40N120.pdf
(4 pages)
Specifications of IXEH40N120
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 40A
Current - Collector (ic) (max)
60A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.0
Tfi, Typ, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.0
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXEH40N120
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXEH40N120D1
Manufacturer:
APT
Quantity:
5 000
NPT
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 40 A; V
= 1 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
GE
GE
= 15 V; T
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= ± 15 V; R
= 39 Ω; T
= 15 V; I
C
CE
G
= 40 A
= 39 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
VJ
= 35 A
G
= 125°C
= 39 Ω; T
(T
G
IXEH 40N120
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
C
E
min.
4.5
Characteristic Values
Maximum Ratings
G
IXEH 40N120D1
440
150
typ.
2.4
2.8
0.4
6.1
3.0
85
50
50
1200
± 20
V
2
300
CES
60
40
10
50
max.
0.42 K/W
200
0.4 mA
3.0
6.5
C
E
mA
mJ
mJ
nC
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
TO-247 AD
Features
• NPT
• optional HiPerFRED
• TO-247 package
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
• inductive heating, cookers
I
V
V
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- industry standard outline
- epoxy meets UL 94V-0
power supplies
C25
G
performance in resonant circuits
easy paralleling
CES
CE(sat) typ.
C
E
3
IGBT
IXEH 40N120
IXEH 40N120D1
= 60 A
= 1200 V
= 2.4 V
TM
diode
C (TAB)
1 - 4
Related parts for IXEH40N120
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXEH40N120 Summary of contents
Page 1
... Ω = ± off MHz ies 600 Gon thJC © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXEH 40N120 IXEH 40N120D1 Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 300 Characteristic Values (T = 25° ...
Page 2
... R thJC Component Symbol Conditions stg M mounting torque d Symbol Conditions R with heatsink compound thCH Weight © 2003 IXYS All rights reserved Maximum Ratings 60 35 Characteristic Values min. typ. max. 2.6 3.0 2 125°C VJ 180 1.8 1.0 K/W Maximum Ratings -55...+150 -55...+150 ...
Page 3
... A GE 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 160 200 IXEH 40N120 IXEH 40N120D1 120 100 Fig. 2 Typ. output characteristics 90 ...
Page 4
... T =125° 600 V I =35A F R 56Ω 50 75Ω 40 75Ω 56Ω 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° ...