IXGR72N60C3D1 IXYS, IXGR72N60C3D1 Datasheet

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IXGR72N60C3D1

Manufacturer Part Number
IXGR72N60C3D1
Description
IGBT 75A 600V ISOPLUS247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGR72N60C3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.93
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
36
Rthjc, Max, Diode, (ºc/w)
0.85
Package Style
ISOPLUS 247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
with Diode
High-Speed Low-Vsat PT IGBT
40-100 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
T
T
V
Clamped Inductive Load
T
50/60 Hz, RMS, t = 1Minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
Test Conditions
I
V
V
I
ISOL
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
600V IGBT
= 50A, V
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
= 25°C
< 1mA
= 250μA, V
= V
= 0V, V
CES
, V
GE
GE
VJ
GE
= ±20V
= 125°C, R
= 15V, Note 1
CE
t = 20 Seconds
= 0V
= V
GE
GE
= 1MΩ
G
= 2Ω
T
T
J
J
= 125°C
= 125°C
IXGR72N60C3D1
Min.
20..120/4.5..27
3.0
Characteristic Values
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CM
CE
= 150
≤ V
2500
3000
Typ.
1.65
2.10
260
±20
±30
400
500
200
150
300
600
600
75
35
36
50
CES
5
Max.
±100
2.70
300
5.5
5
N/lb
mA
mJ
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
A
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Optimized for Low Switching Losses
Square RBSOA
Isolated Mounting Surface
Anti-Parallel Ultra Fast Diode
Avalanche Rated
2500V Electrical Isolation
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 35A
= 55ns
£
Isolated Tab
DS100010A(11/09)
2.7V

Related parts for IXGR72N60C3D1

IXGR72N60C3D1 Summary of contents

Page 1

... GE(th CES CE CES GE = ±20V 0V, V GES 50A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGR72N60C3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 400 50 500 = 2Ω 150 G CM ≤ CES 200 -55 ... +150 150 -55 ... +150 2500 3000 20..120/4.5..27 ...

Page 2

... Characteristic Values Min. Typ 150°C 1 100°C 8 30V R (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60C3D1 ISOPLUS247 (IXGR) Outline Max 130 ns 110 ns 0. 0.62 °C/W °C/W Max. 2 0.85 °C ...

Page 3

... J 1 15V GE 13V 1.2 11V 1.1 9V 1.0 0.9 7V 0.8 0.7 0.6 5V 0.5 1.6 2.0 2.4 100 T = 25º IXGR72N60C3D1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V JunctionTemperature V = 15V 50A 25A Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25º ...

Page 4

... C ies 120 100 C oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60C3D1 Fig. 8. Gate Charge V = 300V 50A 10mA 100 120 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 2Ω < 10V / ns 200 300 400 V - Volts CE 0 ...

Page 5

... C 100 0 105 115 125 150 160 140 140 130 120 T = 125ºC 120 J 100 110 100 90 = 25º 100 IXGR72N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... 480V 100A 50A Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 110 100 105 115 125 IXGR72N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 480V 25ºC, 125º Amperes 100 IXYS REF: G_72N60C3(8D)11-25-09-C ...

Page 7

... I = 30A, 60A, 120A 110 F 100 90 80 160 0 200 400 600 -di /dt F Fig. 25. Recorvery Time t -di /dt F 0.01 0.1 0.01 Pulse Width - Seconds IXGR72N60C3D1 100° 300V 120A, 60A, 30A A/μs 1000 0 200 400 /dt F Fig. 23. Peak ReverseCurrent I r Versus -di ...

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