IXSH25N120AU1 IXYS, IXSH25N120AU1 Datasheet

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IXSH25N120AU1

Manufacturer Part Number
IXSH25N120AU1
Description
IGBT 50A 1200V TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXSH25N120AU1

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
650
Eoff, Typ, Tj=125°c, Igbt, (mj)
9.6
Rthjc, Max, Igbt, (k/w)
0.63
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXSH25N120AU1
Manufacturer:
NEC
Quantity:
10 000
© 2000 IXYS All rights reserved
IGBT with Diode
"S" Series - Improved SCSOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
M
Weight
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
Symbol
IXYS reserves the right to change limits, test conditions, and dimensions.
BV
V
I
I
V
C25
C90
CM
sc
CES
GES
J
JM
STG
CGR
C
CES
GES
GEM
d
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 µH
T
T
Mounting torque
Test Conditions
I
I
V
Note 2
V
I
C
C
C
C
C
C
C
J
J
J
GE
CE
CE
= 125ºC, V
= I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
= 15 V, T
= 4 mA, V
= 2.5 mA, V
= 0.8 V
= 0 V, V
C90
, V
GE
CES
= 15 V
GE
J
CE
= 125°C, R
GE
, V
= ±20 V
= 720 V; V
CE
= 0 V
GE
= V
= 0 V
GE
GE
= 1 MW
G
GE
= 33 W
= 15V, R
T
T
(T
J
J
= 25°C
= 125°C
J
= 25°C unless otherwise specified)
IXSH25N120AU1
G
= 33W
Min.
1200
Characteristic Values
-55 ... +150
-55 ... +150
4
@ 0.8 V
Maximum Ratings
I
CM
1.15/10 Nm/lb-in.
Typ.
1200
1200
= 50
±30
G
±20
200
150
300
CES
50
25
80
10
6
+ 100 nA
500 mA
Max.
4.0
8
8 mA
V
V
V
V
A
A
A
A
µs
W
°C
°C
°C
g
°C
C
E
V
V
V
I
V
V
TO-247 AD
Features
• High frequency IGBT with guaranteed
• IGBT with anti-parallel diode in one
• 2
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies
• Switched-mode and resonant-mode
• DC choppers
Advantages
• Saves space (two devices in one
• Easy to mount (isolated mounting
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble
C25
Low V
- for minimum on-state conduction
- drive simplicity
short circuit SOA capability.
package
(UPS)
power supplies
package)
hole)
CES
CE(sat)
nd
losses
generation HDMOS
CE(sat)
G
E
C
=
= 1200 V
=
4.0 V
50 A
TM
process
94521C(7/00)
1 - 2

Related parts for IXSH25N120AU1

IXSH25N120AU1 Summary of contents

Page 1

... 0 CES CE CES GE Note ±20 V GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH25N120AU1 G Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 0.8 V CES = 15V 33W 200 -55 ... +150 150 -55 ... +150 1.15/10 Nm/lb-in. ...

Page 2

... K/W (Clamp) > 0 higher values. CE CES J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXSH25N120AU1 TO-247 AD (IXSH) Outline Max Dim. Millimeter Inches ns Min. Max. Min 19.81 20.32 0.780 0.800 B 20 ...

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