IXGR72N60B3H1 IXYS, IXGR72N60B3H1 Datasheet

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IXGR72N60B3H1

Manufacturer Part Number
IXGR72N60B3H1
Description
IGBT 75A 600V ISOPLUS247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGR72N60B3H1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 60A
Current - Collector (ic) (max)
75A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
92
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.2
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
34
Rthjc, Max, Diode, (ºc/w)
0.80
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
(Electrically Isolated Back Surface)
Medium Speed Low Vsat PT IGBT
for 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
50/60 Hz, RMS, t = 1minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
Test Conditions
I
V
V
I
I
ISOL
C
C
C
J
J
C
C
C
C
C
GE
CE
CE
600V IGBT
= 60A, V
= 120A
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
< 1mA
= 250μA, V
= V
= 0V, V
CES
, V
GE
GE
VJ
GE
= ±20V
= 125°C, R
= 15V, Note 1
CE
t = 20 seconds
= 0V
= V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 3Ω
T
J
= 125°C
IXGR72N60B3H1
Min.
20..120/4.5..27
3.0
Characteristic Values
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CM
CE
= 240
≤ 600
2500
3000
1.50
Typ.
1.75
260
±20
±30
450
200
150
300
600
600
75
40
34
5
±100
Max.
300
1.80
5.0
5
N/lb
mA
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
High Power Density
Low Gate Drive Requirement
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Control
DC Servo and Robot Drives
CES
CE(sat)
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 40A
= 92ns
£
1.80V
ISOLATED TAB
DS99875A(03/09)

Related parts for IXGR72N60B3H1

IXGR72N60B3H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 60A 15V, Note 1 CE(sat 120A C © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGR72N60B3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 450 = 3Ω 240 G CM ≤ 600 V CE 200 -55 ... +150 150 -55 ... +150 2500 3000 20 ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 100°C 8 300V 100°C 140 R J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60B3H1 ISOPLUS247 (IXGR) Outline Max 240 ns 150 ns 2 0.62 °C/W °C/W Max. 2.0 V 1.8 ...

Page 3

... GE 13V 11V 1.4 1.6 1.8 2.0 2.2 2 25º IXGR72N60B3H1 Fig. 2. Extended Output Characteristics @ 25ºC 330 V = 15V GE 300 13V 11V 270 240 210 9V 180 150 120 Volts CE Fig. 4. Dependence of V Junction Temperature 1 ...

Page 4

... C ies 240 200 160 C oes 120 80 C res 40 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60B3H1 Fig. 8. Gate Charge V = 300V 60A 10mA 100 120 140 160 180 200 220 240 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... T = 125ºC J 180 220 160 205 140 190 120 175 100 160 = 25ºC 145 J 130 100 IXGR72N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V T = 125º Amperes C Fig. 15. Inductive Turn-off Switching Times vs ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 140 90 125 80 110 d(on ) Ω 15V 480V 105 115 125 IXGR72N60B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125ºC J 25ºC < Amperes < 125º 100 IXYS REF: G_72N60B3(76)02-10-09-D ...

Page 7

... Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode) © 2009 IXYS CORPORATION, All Rights Reserved Fig. 22 Typ. Reverse Recovery F Charge Q rr Fig. 25 Typ Recovery Time t 0.01 0.1 Pulse Width [s] IXGR72N60B3H1 Fig. 23 Typ. Peak Reverse Current 100 IXYS REF: G_72N60B3(76)02-10-09-D ...

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