IXGX50N120C3H1 IXYS, IXGX50N120C3H1 Datasheet

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IXGX50N120C3H1

Manufacturer Part Number
IXGX50N120C3H1
Description
IGBT 1200V 95A GENX3 PLUS247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGX50N120C3H1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.2V @ 15V, 40A
Current - Collector (ic) (max)
95A
Power - Max
460W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
95
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
4.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
64
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.1
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.3
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGX50N120C3H1
Manufacturer:
IXYS
Quantity:
1 200
GenX3
w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C100
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
V
V
I
Test Conditions
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
1200V IGBTs
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C ( Chip Capability )
= 100°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= V
= 0V, V
= 40A, V
CES
, V
J
GE
= 125°C, R
GE
GE
= ±20V
= 0V
CE
= 15V, Note 2
= V
GE
T
GE
J
G
= 1MΩ
= 125°C, Note 1
= 3Ω
Advance Technical Information
T
J
= 125°C
IXGK50N120C3H1
IXGX50N120C3H1
20..120/4.5..14.6
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
1.13/10
≤ ≤ ≤ ≤ ≤ V
= 100
1200
1200
300
Typ.
±20
±30
240
750
460
150
260
2.6
CES
95
50
40
10
6
±100
250
Max.
4.2
Nm/lb.in.
5.0
14
N/lb.
mA
mJ
μA
°C
°C
°C
°C
nA
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXGK)
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C100
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
High Avalanche Capability
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
TM
C
C
≤ ≤ ≤ ≤ ≤ 4.2V
= 1200V
= 50A
= 64ns
E
E
(IXGX)
E
E
TAB = Collector
DS100163(06/09)
(TAB)
(TAB)
= Emitter

Related parts for IXGX50N120C3H1

IXGX50N120C3H1 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 40A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGK50N120C3H1 IXGX50N120C3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 240 40 750 = 3Ω 100 G CM ≤ ≤ ≤ ≤ ≤ CES 460 -55 ... +150 150 -55 ...

Page 2

... Characteristic Values Min. Typ. 2 125° 800V 75 measurement. CES (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK50N120C3H1 IXGX50N120C3H1 TO-264 (IXGK) Outline Max 1 0.27 °C/W °C/W PLUS247 TM (IXGX) Outline Max. 2.4 V 2.3 ...

Page 3

... T = 25º 4.0 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature I = 100A 50A 25A 100 T - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 4

... C ies oes 40 C res 200 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGK50N120C3H1 IXGX50N120C3H1 Fig. 8. Gate Charge V = 600V 50A 10mA 100 120 140 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 2Ω < 10V / ns 400 600 ...

Page 5

... V = 15V G GE 220 V = 600V CE 250 200 200 180 T = 125ºC J 160 150 140 100 120 T = 25º 100 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 80A 40A 80A 40A 105 115 125 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 125ºC, 25º 600V Amperes IXYS REF: G_50N120C3H1(7N)6-19-09 ...

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