IXGK50N60BD1 IXYS, IXGK50N60BD1 Datasheet
IXGK50N60BD1
Specifications of IXGK50N60BD1
Related parts for IXGK50N60BD1
IXGK50N60BD1 Summary of contents
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... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGK 50N60BD1 IXGX 50N60BD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 200 = 100 0.8 V CES 300 -55 ... +150 150 -55 ...
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... CE or increased 2.5 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. /dt = 100 A/ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGK 50N60BD1 IXGX 50N60BD1 TO-264 AA Outline Dim. Millimeter Min ...
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... V - Volts CE Figure 3. Saturation Voltage Characteristics 100 V = 10V 125° Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved V = 15V GE 13V 11V Figure 2. Extended Output Characteristics Figure 4. Temperature Dependence of V 10000 T = 25° Figure 6. Capacitance Curves IXGK 50N60BD1 IXGX 50N60BD1 200 T = 25° ...
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... nanocoulombs g Figure 9. Gate Charge 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 Figure 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 12 E (ON (OFF 100 and OFF C 600 100 10 0.1 100 120 D = Duty Cycle 0.001 ...
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... T VJ Fig. 15. Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 18. Transient thermal resistance junction to case © 2000 IXYS All rights reserved 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 1000 0 m 100 ...