IXGK50N60AU1 IXYS, IXGK50N60AU1 Datasheet
IXGK50N60AU1
Specifications of IXGK50N60AU1
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IXGK50N60AU1 Summary of contents
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... 500 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1997 IXYS All rights reserved IXGK 50N60AU1 Maximum Ratings 600 = 1 M 600 200 = 100 0.8 V CES 300 -55 ... +150 150 -55 ... +150 0.9/6 Nm/lb.in. 10 300 Characteristic Values ( unless otherwise specified) J min. typ. max. ...
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... - C90 360 -di/dt = 200 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 200 = 0 CES 80 50 210 = 2.7 off ...
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... V - Volts GE Fig. 5 Input Admittance 100V 25° 125° Volts GE © 1997 IXYS All rights reserved 13V 11V 40A 20A IXGK 50N60AU1 Fig. 2 Output Characterstics 350 13V V = 15V GE 11V 300 9V 250 200 150 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 1 ...
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... D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 150 200 250 Volts D = Duty Cycle 0.001 0.01 ...
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... IXYS All rights reserved IXGK 50N60AU1 ...
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... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGK 50N60AU1 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 5,187,117 5,486,715 5,237,481 5,381,025 ...