IXSH35N120A IXYS, IXSH35N120A Datasheet
IXSH35N120A
Specifications of IXSH35N120A
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IXSH35N120A Summary of contents
Page 1
... 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 35N120A Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 140 = 0.8 V CES , T = 125°C 10 CES J 300 -55 ... +150 150 -55 ...
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... CES 125°C J 150 = 2.7 W 2.5 G 400 (Clamp) > 0.8 • 700 CES G 15 0.25 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 35N120A TO-247 AD (IXSH) Outline max 190 100 nC Dim ...
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... Volts GE Fig.5 Input Admittance 10V 125° 25° 40C Volts GE © 2000 IXYS All rights reserved 13V =15V 11V IXSH 35N120A Fig.2 Output Characterstics 250 V = 15V T = 25° 200 150 100 Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1.4 V =15V GE 1 ...
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... Q - nanocoulombs G Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 25 1250 20 1000 15 750 10 500 250 100 10 1 0.1 0.01 150 200 0.001 0.01 Pulse Width - Seconds ...