IXGK50N60B IXYS, IXGK50N60B Datasheet
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Manufacturer Part Number
IXGK50N60B
Description
IGBT HI SPEED 600V 75A TO-264
Series
HiPerFAST™, Lightspeed 2™r
Specifications of IXGK50N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264AA
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
50
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
120
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.2
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Part Number:
IXGK50N60B 2D1
Part Number:
IXGK50N60B U1
HiPerFAST
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
GE
C
GE
CE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
VJ
CES
= 15 V
= 20 V
= 125 C, R
IGBT
GE
CE
= 0 V
= V
GE
GE
= 1 M
G
= 10
(T
T
T
J
J
J
= 25 C, unless otherwise specified)
= 25 C
= 125 C
TO-247AD
TO-264
TO-247
TO-264
TO-268
IXGK 50N60B
IXGH 50N60B
IXGT 50N60B
IXGJ 50N60B
600
2.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
I
Maximum Ratings
CM
Typ.
1.13/10 Nm/lb.in.
= 100
0.9/6 Nm/lb.in.
600
600
200
300
150
300
20
30
75
50
CES
10
6
4
Max.
200
100
5.0
2.3
1
mA
nA
W
V
C
A
V
V
V
V
A
A
A
A
g
g
g
V
V
C
C
C
TO-247 AD (IXGH)
TO-268 (D3) ( IXGT)
TO-268 Leaded (IXGJ)
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOS
• High current handling capability
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with 1 screw
• Switching speed for high frequency
• High power density
G = Gate
E = Emitter
TO-264 AA (IXGK)
V
I
V
t
- drive simplicity
power supplies
(insulated mounting screw hole)
applications
C25
fi(typ)
CES
CE(sat)
G
G
G
C
C
C
= 600 V
=
= 2.3 V
= 120
E
E
E
E
75 A
D = Drain
TAB = Collector
C (TAB)
95585F(12/02)
ns
TM
(TAB)
C (TAB)
process
C (TAB)
Related parts for IXGK50N60B
IXGK50N60B Summary of contents
... GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 50N60B IXGK 50N60B IXGT 50N60B IXGJ 50N60B Maximum Ratings 600 = 1 M 600 200 = 100 0.8 V CES 300 -55 ... +150 150 -55 ... +150 TO-247AD 1.13/10 Nm/lb.in. TO-264 0.9/6 Nm/lb.in. ...
... TO-247 & TO-268 leaded packages R thCK TO-264 package TO-268 (IXGT) Outline Terminals Gate 2 - Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ 4100 ...
... V - Volts CE Figure 5. Admittance Curves 100 V = 10V 125° Volts GE © 2002 IXYS All rights reserved V = 15V GE 13V 11V Figure 6. Capacitance Curves 10000 1000 T = 25° IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 2. Extended Output Characteristics 200 T = 25°C ...
... D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: and Figure 8. Dependence of E OFF (ON ...
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