IRG7PH46UPBF International Rectifier, IRG7PH46UPBF Datasheet

IGBT N-CH 1200V TO-247AC

IRG7PH46UPBF

Manufacturer Part Number
IRG7PH46UPBF
Description
IGBT N-CH 1200V TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH46UPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
40A
Power - Max
469W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1
Features
• Low V
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
V
I
I
I
I
I
V
P
P
T
T
R
R
R
INSULATED GATE BIPOLAR TRANSISTOR
Absolute Maximum Ratings
Thermal Resistance
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM
GE
Parameter
Parameter
= 15V
GE
= 20V
c
G
f
n-channel
f
C
E
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
Gate
IRG7PH46UPbF
G
C
TO-247AC
10 lbf·in (1.1 N·m)
IRG7PH46UPbF
G C
-55 to +175
IRG7PH46U-EP
Max.
1200
130
Typ.
0.24
120
160
±30
469
234
–––
75
40
40
E
Collector
I
C
V
= 75A, T
C
CE(on)
T
V
J(max)
CES
Max.
IRG7PH46U-EP
0.32
–––
–––
typ. = 1.7V
= 1200V
C
TO-247AD
=175°C
C
= 100°C
www.irf.com
Emitter
G C
E
Units
Units
04/20/10
°C/W
°C
E
W
V
A
V

Related parts for IRG7PH46UPBF

IRG7PH46UPBF Summary of contents

Page 1

... CES I = 75A 100° =175°C J(max typ. = 1.7V CE(on TO-247AC TO-247AD IRG7PH46U-EP IRG7PH46UPbF G C Gate Collector Emitter Max. 1200 130 75 40 120 160 ±30 469 234 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. Max. ...

Page 2

... IRG7PH46UPbF/IRG7PH46U-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... 25° 175°C Single Pulse 0 100 V CE (V) Fig Forward SOA ≤ 25°C, T 175° www.irf.com IRG7PH46UPbF/IRG7PH46U- Frequency ( kHz ) (Load Current = I of fundamental) RMS 125 150 175 1000 10µsec 1000 10000 =15V GE For both: Duty cycle : 50 150° 100°C Vcc = 600V ...

Page 4

... IRG7PH46UPbF/IRG7PH46U-EP 160 140 120 100 (V) Fig Typ. IGBT Output Characteristics T = -40°C; tp =20µs J 160 140 120 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 20µ 20A 40A 80A (V) Fig Typical V vs 25° 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ...

Page 5

... Gate-to-Emitter Voltage (V) Fig. 12- Typ. Transfer Characteristics V = 50V 20µs CE 1000 td OFF t F 100 (A) Fig Typ. Switching Time vs 175° 200µ 600V www.irf.com IRG7PH46UPbF/IRG7PH46U-EP 9200 8200 7200 6200 5200 4200 3200 2200 1200 175° 200µ 10000 8000 6000 4000 2000 10Ω; V ...

Page 6

... IRG7PH46UPbF/IRG7PH46U-EP 10000 Cies 1000 100 Coes Cres 10 0 100 200 300 V CE (V) Fig Typ. Capacitance vs 0V 1MHz 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC 6 400 ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) DIODE CLAMP L DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit G f orce www.irf.com IRG7PH46UPbF/IRG7PH46U- VCC VCC rce 100K D1 22K 0.0075µ DUT rce Fig.C.T.5 - BVCES Filter Circuit L + DUT - Vclamped Rg Fig.C.T.2 - RBSOA Circuit VCC R = ICM DUT Fig.C.T.4 - Resistive Load Circuit ...

Page 8

... IRG7PH46UPbF/IRG7PH46U-EP 900 tf 800 700 600 90 500 400 300 5% V 200 5% I 100 0 Eoff Loss -100 -0.5 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT -10 1.5 2 Fig. WF2 - Typ. Turn-on Loss Waveform 900 tr TEST 800 CURRENT ...

Page 9

... TO-247AC package is not recommended for Surface Mount Application. www.irf.com IRG7PH46UPbF/IRG7PH46U-EP 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & 9 ...

Page 10

... IRG7PH46UPbF/IRG7PH46U-EP TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 "$C $% $& Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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