IXGR120N60B

Manufacturer Part NumberIXGR120N60B
DescriptionIGBT FAST 600V 156A ISOPLUS247
ManufacturerIXYS
SeriesHiPerFAST™
IXGR120N60B datasheets

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Specifications of IXGR120N60B

Igbt TypePTVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic2.1V @ 15V, 100ACurrent - Collector (ic) (max)156A
Power - Max520WInput TypeStandard
Mounting TypeThrough HolePackage / CaseISOPLUS247™
Channel TypeNConfigurationSingle
Collector-emitter Voltage600VGate To Emitter Voltage (max)±20V
Package TypeISOPLUS 247Pin Count3 +Tab
MountingThrough HoleOperating Temperature (min)-55
Operating Temperature (max)150COperating Temperature ClassificationMilitary
Vces, (v)600Ic25, Tc=25°c, Igbt, (a)156
Ic90, Tc=90°c, Igbt, (a)-Ic110, Tc=110°c, Igbt, (a)80
Vce(sat), Max, Tj=25°c, Igbt, (v)2.1Tfi, Typ, Tj=25°c, Igbt, (ns)160
Eoff, Typ, Tj=125°c, Igbt, (mj)8.7Rthjc, Max, Igbt, (°c/w)0.3
If, Tj=110°c, Diode, (a)-Rthjc, Max, Diode, (ºc/w)-
Package StyleISOPLUS247™Lead Free Status / RoHS StatusLead free / RoHS Compliant
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HiPerFAST
IGBT
TM
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Symbol
Test Conditions
V
T
= 25°C to 150°C
CES
J
V
T
= 25°C to 150°C; R
CGR
J
V
Continuous
GES
V
Transient
GEM
I
T
= 25°C
C25
C
I
T
= 110°C
C110
C
I
External lead limit
L(RMS)
I
T
= 25°C, 1 ms
CM
C
SSOA
V
= 15 V, T
= 125°C, R
GE
VJ
(RBSOA)
Clamped inductive load
P
T
= 25°C
C
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V
50/60 Hz, RMS, t = 1minute leads-to-tab
ISOL
Weight
Symbol
Test Conditions
BV
I
= 1 mA, V
= 0 V
CES
C
GE
V
I
= 1 mA, V
= V
GE(th)
C
CE
GE
I
V
= 0.8 • V
CES
CE
CES
V
= 0 V
GE
= ±20 V
I
V
= 0 V, V
GES
CE
GE
V
I
= 100A, V
= 15 V (see note 1)
CE(sat)
C
GE
© 2004 IXYS All rights reserved
IXGR 120N60B
Maximum Ratings
600
= 1 MΩ
600
GE
±20
±30
156
102
76
300
= 2.4 Ω
I
= 200
G
CM
@ 0.8 V
CES
520
-55 ... +150
150
-55 ... +150
300
2500
5
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
600
2.5
T
= 25°C
J
T
= 150°C
J
±400
V
= 600 V
CES
I
= 156 A
C25
=
V
CE(sat)
ISOPLUS 247
E153432
V
V
V
V
G
C
Isolated Backside*
E
A
A
A
G = Gate,
C = Collector
E = Emitter
A
* Patent pending
A
W
Features
°C
DCB Isolated mounting tab
°C
Meets TO-247AD package Outline
°C
High current handling capability
°C
Latest generation HDMOS
MOS Gate turn-on
V
- drive simplicity
g
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
V
DC servo and robot drives
DC choppers
5.5
V
Advantages
µA
200
2 mA
Easy assembly
nA
High power density
Very fast switching speeds for high
2.1
V
frequency applications
2.1 V
process
TM
DS98744A(08/04)

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IXGR120N60B Summary of contents

  • Page 1

    ... GE(th 0.8 • V CES CE CES ± GES 100A (see note 1) CE(sat © 2004 IXYS All rights reserved IXGR 120N60B Maximum Ratings 600 = 1 MΩ 600 GE ±20 ±30 156 102 76 300 = 2.4 Ω 200 0.8 V CES 520 -55 ... +150 150 -55 ... +150 300 2500 5 ...

  • Page 2

    ... increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

  • Page 3

    ... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.6 3.4 3 150A C 100A 2.8 50A 2.6 2.4 2.2 2 1.8 1 Volts G E © 2004 IXYS All rights reserved º C 300 = 15V 13V 250 11V 9V 200 150 7V 100 50 5V 1.6 1.8 2 2.2 2.4 º C 1.2 = 15V 1.2 13V 1 ...

  • Page 4

    ... C fi 100A T = 125ºC J 500 V = 15V 480V CE 400 300 I = 100A C 50A 200 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 100 120 140 160 180 C º C º 100 G 350 300 250 200 150 100 IXGR 120N60B Fig ...

  • Page 5

    ... I = 100A C 50A 100 Degrees Centigrade J Fig. 15. Capacitance 100000 MHz 10000 1000 C 100 Volts © 2004 IXYS All rights reserved 2.7Ω 15V 480V 85 95 105 115 125 220 200 180 C ies 160 140 120 100 C oes res Fig . 17. M axim tan ce ...

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