IXSK35N120AU1 IXYS, IXSK35N120AU1 Datasheet
IXSK35N120AU1
Manufacturer Part Number
IXSK35N120AU1
Description
IGBT W/DIODE 1200VLT 70AMP TO264
Manufacturer
IXYS
Datasheet
1.IXSK35N120AU1.pdf
(2 pages)
Specifications of IXSK35N120AU1
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264AA
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-264AA
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
10
Rthjc, Max, Igbt, (k/w)
0.42
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
Q2524153
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSK35N120AU1
Manufacturer:
APEC
Quantity:
6 000
© 2000 IXYS All rights reserved
High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
C25
C90
CM
SC
CES
GES
J
JM
stg
L
CGR
C
CES
GES
GEM
d
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 5 mA, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
J
CE
GE
CES
= 125°C, R
GE
CE
= 15 V
= 720 V, T
= ±20 V
= 0 V
= V
GE
IGBT
Diode
GE
G
= 1 MW
J
= 22 W
= 125°C
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSK35N120AU1
1200
min.
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.15/13 Nm/lb.in.
CM
1200
1200
= 70
±20
±30
140
300
190
150
300
CES
10
70
35
10
max.
±100
750
15
8
4
mA
ms
°C
°C
°C
°C
W
W
mA
nA
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
TO-264 AA
G = Gate,
E = Emitter,
Features
• International standard package
• High frequency IGBT and anti-parallel
• 2nd generation HDMOS
• Low V
• MOS Gate turn-on
• Fast Recovery Epitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings (two devices in one
• Easy to mount with one screw
• High power density
C25
JEDEC TO-264 AA
FRED in one package
- for minimum on-state conduction
- drive simplicity
- soft recovery with low I
power supplies
package)
(isolated mounting screw hole)
CES
CE(sat)
losses
G
C
CE(sat)
E
= 1200 V
=
=
C = Collector,
TAB = Collector
70 A
4 V
TM
RM
process
94526F(7/00)
C (TAB)
1 - 2
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IXSK35N120AU1 Summary of contents
Page 1
... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSK35N120AU1 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 140 = 0.8 V CES = 125° 300 190 -55 ... +150 150 -55 ...
Page 2
... J /dt = 480 A/ 100°C 225 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSK35N120AU1 TO-264 AA Outline 190 nC Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2.89 100 ...