GT60M303(Q) Toshiba, GT60M303(Q) Datasheet
GT60M303(Q)
Manufacturer Part Number
GT60M303(Q)
Description
IGBT 900V DUAL 60A TO-3P LH
Manufacturer
Toshiba
Datasheet
1.GT60M303Q.pdf
(6 pages)
Specifications of GT60M303(Q)
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 60A
Current - Collector (ic) (max)
60A
Power - Max
170W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Collector- Emitter Voltage Vceo Max
900 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
+/- 500 nA
Power Dissipation
170 W
Continuous Collector Current Ic Max
60 A
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
HIGH POWER SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
EQUIVALENT CIRCUIT
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed I
Low saturation voltage
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Emitter−Collector
Foward Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
CHARACTERISTIC
FRD : t
GBT
: t
f
rr
= 0.25μs (TYP.)
= 0.7μs (TYP.)
DC
1ms
DC
1ms
: V
CE (sat)
SYMBOL
I
GT60M303
V
V
= 2.1V (TYP.)
I
ECFP
T
I
ECF
P
GES
CES
I
CP
―
T
stg
C
C
j
(Ta = 25°C)
−55~150
RATING
900
±25
120
120
170
150
0.8
60
15
1
MARKING
UNIT
N·m
°C
°C
W
GT60M303
V
V
A
A
TOSHIBA
JAPAN
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
GT60M303
2-21F2C
2006-11-01
⎯
⎯
Unit: mm
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GT60M303(Q) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Page 2
ELECTRICAL CHARACTERISTICS CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate−Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Turn−On Time Switching Time Fall Time Turn−Off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance ...
Page 3
GT60M303 2006-11-01 ...
Page 4
GT60M303 2006-11-01 ...
Page 5
GT60M303 2006-11-01 ...
Page 6
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...