IGW08T120 Infineon Technologies, IGW08T120 Datasheet
IGW08T120
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IGW08T120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series ® and Fieldstop technology CE(sat) http://www.infineon.com/igbt/ T Marking Code CE(sat),Tj=25°C j,max 1.7V G08T120 150°C Symbol jmax IGW08T120 PG-TO-247-3 Package PG-TO-247-3 Value Unit 1200 ±20 V µ °C -40...+150 -55...+150 260 Rev. 2.6 Nov. 09 ...
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... 15V 25° 5° 0° 3mA 1200V , 25° 0° 20V 25V 0V 60V ≤10µ 5V 600V 25° IGW08T120 q Max. Value Unit 1.7 K/W 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 2.2 - 5.0 5 100 none Ω - 600 - Rev. 2.6 Nov. 09 ...
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... Symbol Conditions 0° 00V 5V 81Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ 3 IGW08T120 q Value Unit min. typ. max 450 - - 0. 0 1.37 - Value Unit min. typ. max 570 - - ...
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... CE Figure 2. Safe operating area ( 600V, ≤150°C 15A 10A 5A 0A 25°C 125° Figure 4. Collector current as a function of case temperature ( IGW08T120 q t =2µs p 10µs 50µs 150µs 500µs 20ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 125°C ...
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... Figure 6. Typical output characteristic (T = 150°C) j 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 10V 12V -50° JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGW08T120 EMITTER VOLTAGE I =15A =2.5A C 0°C 50°C 100°C Rev. 2.6 ...
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... Dynamic test circuit in Figure 150°C -50°C 0° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA) C =81Ω, 6 IGW08T120 q 100Ω 150Ω 200Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =8A max. typ. min. 50°C 100°C 150°C JUNCTION TEMPERATURE Rev ...
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... off 0mJ 125°C 400V 500V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T =81Ω Dynamic test circuit in Figure E) 7 IGW08T120 q and E include losses off off on 50Ω 100Ω 150Ω 200Ω R ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 75A 50A 25A 0A 16V 12V V GE Figure 20. Typical short circuit collector current as a function of gate- =25°C) emitter voltage IGW08T120 q C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) 14V 16V 18V , - GATE EMITTETR VOLTAGE ≤ ...
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... I C 10A 10A 1.5us 0us 0.5us Figure 22. Typical turn off behavior = 150° Dynamic test circuit in Figure E) τ 1.73*10 -2 2.75*10 -3 2.57*10 -4 2.71* τ 100ms 9 IGW08T120 q 600V 400V 200V 0V 1us 1.5us t, TIME =15/0V, R =81Ω 150° Rev. 2.6 Nov. 09 ...
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... Power Semiconductors IGW08T120 ® TrenchStop Series 10 q Rev. 2.6 Nov. 09 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGW08T120 ® TrenchStop Series τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity τ τ =180nH σ =39pF. σ Rev. 2.6 Nov. 09 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGW08T120 ® TrenchStop Series 12 q Rev ...