IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet

IGBT 1200V 50A 365W TO247-3

IHW25N120R2

Manufacturer Part Number
IHW25N120R2
Description
IGBT 1200V 50A 365W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IHW25N120R2

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
365W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Max
365W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
RC Soft Switching Series 8-60 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IHW25N120R2
Quantity:
4 500
Company:
Part Number:
IHW25N120R2
Quantity:
15
Part Number:
IHW25N120R2 H25R1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Reverse Conducting IGBT with monolithic body diode
Features:
Applications:
Type
IHW25N120R2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area (V
Diode forward current
T
T
Diode pulsed current, t
Diode surge non repetitive current, t
T
T
T
Gate-emitter voltage
Transient Gate-emitter voltage (t
Power dissipation T
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
Power Semiconductors
C
C
C
C
C
C
C
J-STD-020 and JESD-022
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C, t
= 25°C, t
= 100°C, t
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
Inductive Cooking
Soft Switching Applications
- very tight parameter distribution
- high ruggedness, temperature stable behavior
p
p
p
= 10ms, sine halfwave
≤ 2.5µs, sine halfwave
≤ 2.5µs, sine halfwave
C
= 25°C
p
1200V
limited by T
V
p
CE
limited by T
CE
p
≤ 1200V, T
1
< 10 µs, D < 0.01)
25A
for target applications
jmax
I
p
C
limited by T
jmax
CE(sat)
V
j
Soft Switching Series
CE(sat),Tj=25°C
≤ 175°C)
1.6V
jmax
1
http://www.infineon.com/igbt/
175°C
T
j,max
V
I
I
-
I
I
I
V
P
T
T
-
Symbol
C
C p u l s
F
F p u l s
F S M
j
s t g
C E
G E
t o t
H25R1202
Marking
IHW25N120R2
-40...+175
-55...+175
Value
1200
130
120
±20
±25
365
260
50
25
75
75
50
25
75
50
PG-TO-247-3
Rev. 2.3
PG-TO-247-3
Package
G
Unit
V
A
V
W
°C
Nov. 09
C
E

Related parts for IHW25N120R2

IHW25N120R2 Summary of contents

Page 1

... Soft Switching Series CE(sat) http://www.infineon.com/igbt CE(sat),Tj=25°C j,max 1.6V 175°C Symbol jmax ≤ 175° jmax limited jmax IHW25N120R2 PG-TO-247-3 Marking Package H25R1202 PG-TO-247-3 Value Unit 1200 130 120 ±20 V ±25 365 W -40...+175 °C -55...+175 260 Rev. 2.3 Nov. 09 ...

Page 2

... 0V 25° 0° 5° mA 1200V 25° 5° 20V 25A IHW25N120R2 Max. Value Unit 0.41 K/W 0.41 40 Value Unit min. Typ. max. 1200 - - V - 1.6 1 1.5 1. 1.8 - 5.1 5.8 6.4 µ 2500 - - 100 none Ω Rev. 2.3 Nov. 09 ...

Page 3

... I = 25A =25 °C j Symbol Conditions 25° 00V 25A 5V 0Ω =175 °C j Symbol Conditions 5° 00V 25A 10Ω IHW25N120R2 - 2342 - Value Unit min. typ. max. - 324 - Value Unit min. Typ. max. - 373 - Rev. 2.3 Nov. 09 ...

Page 4

... CE 50A 40A 30A 20A 10A 0A 125°C 150°C 25°C 50° Figure 4. DC Collector current as a function of case temperature ( IHW25N120R2 t =1µs p 10µs 20µs 50µs 500µs 5ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 100°C 125°C 150°C ...

Page 5

... CE Figure 6. Typical output characteristic (T = 175°C) j 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 8V 10V T , JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature ( IHW25N120R2 V =20V GE 15V 13V 11V EMITTER VOLTAGE I =50A C I =25A C I =12.5A C 50°C 100°C 150° ...

Page 6

... GE Dynamic test circuit in Figure E) t d(off 125°C 150°C -50° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.6mA) C =10Ω IHW25N120R2 t d(off 30Ω 40Ω 50Ω 60Ω 70Ω GATE RESISTOR G =175°C, V =600V =0/15V, I =25A, C max. typ. min. 0°C 50°C 100° ...

Page 7

... V , COLLECTOR CE Figure 16. Typical turn-off energy as a function of collector emitter voltage =10Ω, (inductive load Dynamic test circuit in Figure E) 7 IHW25N120R2 E off 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω GATE RESISTOR G =175°C, V =600V =0/15V, I =25A off ...

Page 8

... K/W τ single pulse 10µs 100ms Figure 20. Diode transient thermal impedance as a function of pulse width (D=t / IHW25N120R2 C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) τ 0.079 7.66*10 -2 0.1708 1.24*10 -4 0.1263 8.56*10 0.05 -5 0.035 7.52* 0.02 0.01 τ ...

Page 9

... V , FORWARD VOLTAGE F Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors IHW25N120R2 Soft Switching Series 2.0V 1.5V 1.0V 0.5V 0.0V 2.0V 0°C 50° JUNCTION TEMPERATURE J Figure 22. Typical diode forward voltage as a function of junction temperature ...

Page 10

... Power Semiconductors IHW25N120R2 Soft Switching Series PG-TO247-3 10 Rev. 2.3 Nov. 09 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IHW25N120R2 Soft Switching Series i Figure C. Definition of diodes switching characteristics τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit τ τ Rev. 2.3 Nov. 09 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IHW25N120R2 Soft Switching Series 12 Rev. 2.3 ...

Related keywords