IHW20T120 Infineon Technologies, IHW20T120 Datasheet

IGBT 1200V 40A 178W TO247-3

IHW20T120

Manufacturer Part Number
IHW20T120
Description
IGBT 1200V 40A 178W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IHW20T120

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
178W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
178W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-247
No. Of Pins
3
Rohs Compliant
Yes
Switching Frequency
RC Soft Switching Series 8-60 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
40.0 A
Ic(max) @ 100°
20.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IHW20T120
Manufacturer:
INFINEON
Quantity:
1 000
Part Number:
IHW20T120
Manufacturer:
INFINEON
Quantity:
12 500
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
Type
IHW20T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area V
Diode forward current
T
T
Diode pulsed current, t
Diode surge non repetitive current, t
T
T
T
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation, T
Operating junction temperature
Storage temperature
1
2)
Power Semiconductors
C
C
C
C
C
C
C
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C, t
= 25 C, t
= 100 C, t
Short circuit withstand time – 10 s
Designed for :
Trenchstop and Fieldstop technology for 1200 V applications
offers:
Very soft, fast recovery anti-parallel EmCon
Low EMI
Qualified according to JEDEC
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
= 15V, V
- Soft Switching Applications
- Induction Heating
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
p
CC
p
p
= 10ms, sine halfwave
®
2.5µs, sine halfwave
2.5µs, sine halfwave
1200V
1200V, T
V
CE
C
= 25 C
p
limited by T
p
j
limited by T
2)
20A
with soft, fast recovery anti-parallel EmCon HE diode
I
C
150 C
CE
1
1200V, T
for target applications
jmax
p
CE(sat)
V
limited by T
jmax
CE(sat),Tj=25°C
1.7V
j
Soft Switching Series
150 C
jmax
HE diode
150 C
1
T
j,max
®
H20T120
Marking
Symbol
V
I
I
-
I
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
F S M
S C
j
s t g
C E
G E
t o t
PG-TO-247-3-21
Package
-40...+150
-55...+150
IHW20T120
Value
1200
130
120
178
40
20
60
60
23
13
36
50
10
20
PG-TO-247-3-21
Rev. 2.2 May 06
G
V
A
A
V
W
Unit
C
C
s
C
E

Related parts for IHW20T120

IHW20T120 Summary of contents

Page 1

... Soft Switching Series ® CE(sat) ™ HE diode 1 for target applications V T Marking CE(sat),Tj=25°C j,max 1.7V H20T120 150 C Symbol jmax 1200V, T 150 jmax limited jmax IHW20T120 PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 130 120 178 W -40...+150 C -55...+150 C Rev. 2.2 May 06 ...

Page 2

... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors Soft Switching Series - 2 IHW20T120 260 Rev. 2.2 May 06 ...

Page 3

... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Soft Switching Series Symbol Conditions Symbol Conditions IHW20T120 Max. Value Unit 0.7 K/W 1.3 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.7 2 1.7 - 5.0 5.8 6 250 - - 2500 - - 600 1460 - 120 - 120 - A Rev. 2.2 May 06 ...

Page 4

... reverse recovery =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery IHW20T120 Value Unit min. typ. max 560 - - 140 - ns - 950 nC - 13.3 A Value Unit min. typ. max 660 - - 130 - - 210 - ns - 1600 - ...

Page 5

... Soft Switching Series 10A 1A 0,1A 10kH z 100kH z 1V Figure 2. IGBT Safe operating area = 600V 40A 30A 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 5 IHW20T120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125°C T ...

Page 6

... Soft Switching Series 60A 50A V 40A 30A 20A 10A Figure 6. Typical output characteristic 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50° Figure 8. Typical collector-emitter 6 IHW20T120 =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150° 0°C 50°C 100° JUNCTION TEMPERATURE ...

Page 7

... Figure 10. Typical switching times as a =35Ω 100°C 150° -50°C Figure 12. Gate-emitter threshold voltage as =600V, =35Ω IHW20T120 t d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =20A Dynamic test circuit in Figure E) 0°C 50°C 100° ...

Page 8

... Figure 14. Typical switching energy losses =35Ω °C 400V V Figure 16. Typical switching energy losses =600V, =35Ω IHW20T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =20A Dynamic test circuit in Figure E) and E ...

Page 9

... C V Figure 18. Typical capacitance as a function 200A 175A 150A 125A 100A 75A 50A 25A 0A 12V 16V Figure 20. Typical short circuit collector =25° IHW20T120 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V GATE EMITTETR VOLTAGE ...

Page 10

... T =150° =25°C J 0µC 800A/µs 200A/µs Figure 24. Typical reverse recovery charge as a function of diode current slope (V =600V Dynamic test circuit in Figure E) 10 IHW20T120 D=0 0.2440 5.53*10 0.4622 7.07*10 0.4972 8.85*10 0.05 0.0946 8.48*10 R 0.02 1 0.01 ...

Page 11

... Dynamic test circuit in Figure E) 2,0V I =15A F 8A 1,5V 5A 2,5A 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IHW20T120 T =25° =150°C J 400A/µs 600A/µs 800A/µs /dt, DIODE CURRENT SLOPE =8A, F 0°C 50°C 100°C , ...

Page 12

... PG-TO247-3-21 Power Semiconductors Soft Switching Series 12 IHW20T120 Rev. 2.2 May 06 ...

Page 13

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit 13 IHW20T120 Rev. 2.2 May 06 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 14 IHW20T120 Rev. 2.2 May 06 ...

Related keywords