IGW25T120 Infineon Technologies, IGW25T120 Datasheet

IGBT 1200V 50A 190W TO247-3

IGW25T120

Manufacturer Part Number
IGW25T120
Description
IGBT 1200V 50A 190W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW25T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
190W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW25T120
Manufacturer:
FUJI
Quantity:
8 000
Part Number:
IGW25T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Low Loss IGBT in TrenchStop
Type
IGW25T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
2)
Power Semiconductors
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25°C
= 100°C
= 25°C
≤ 1200V, T
Short circuit withstand time – 10µs
Designed for :
TrenchStop
offers :
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Low Gate Charge
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 15V, V
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CC
j
≤ 1200V, T
®
≤ 150°C
1200V
and Fieldstop technology for 1200 V applications
V
CE
p
j
25A
limited by T
2)
≤ 150°C
I
C
1
V
for target applications
CE(sat),Tj=25°C
1.7V
jmax
®
CE(sat)
and Fieldstop technology
TrenchStop
150°C
T
j,max
1
http://www.infineon.com/igbt/
®
G25T120
Marking
Series
V
I
I
-
V
t
P
T
T
-
Symbol
C
C p u l s
S C
j
s t g
C E
G E
t o t
PG-TO-247-3
Package
IGW25T120
-40...+150
-55...+150
Value
1200
±20
190
260
50
25
75
75
10
Rev. 2.4
PG-TO-247-3
G
Unit
V
A
V
µs
W
°C
Nov. 09
C
E

Related parts for IGW25T120

IGW25T120 Summary of contents

Page 1

... Power Semiconductors ® TrenchStop Series ® and Fieldstop technology CE(sat) http://www.infineon.com/igbt/ T Marking CE(sat),Tj=25°C j,max 1.7V G25T120 150°C Symbol jmax IGW25T120 PG-TO-247-3 Package PG-TO-247-3 Value Unit 1200 ±20 V µs 10 190 W -40...+150 °C -55...+150 260 Rev. 2.4 Nov. 09 ...

Page 2

... 1mA , 1200V , 25° 0° 20V 25A 25V 0V 60V 25A ≤10µ 5V 600V 25° IGW25T120 Max. Value Unit 0.65 K/W 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 2.2 - 5.0 5 600 Ω - 1860 - 155 - 150 - A Rev. 2.4 Nov. 09 ...

Page 3

... Symbol Conditions 0° 00V 25A 5V 22Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ 3 IGW25T120 Value Unit min. typ. max 560 - - 2 2 4.2 - Value Unit min. typ. max 660 - ...

Page 4

... Figure 2. Safe operating area ( ≤150°C;V = 600V 40A 30A 20A 10A 0A 25°C 125° Figure 4. Collector current as a function of case temperature ( IGW25T120 t =3µs p 10µs 50µs 150µs 500µs 20ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 125°C ...

Page 5

... T , JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGW25T120 EMITTER VOLTAGE I =50A C I =25A C I =15A C I =8A C 0°C 50°C 100°C Rev. 2.4 Nov. 09 ...

Page 6

... T =22Ω Dynamic test circuit in Figure 150°C -50°C 0° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 1.0mA) C =22Ω IGW25T120 t d(off d(on 15Ω 25Ω 35Ω 45Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =25A max. typ. min. 50°C 100° ...

Page 7

... E * 1mJ on 0mJ 150°C 400V 500V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T =22Ω Dynamic test circuit in Figure E) 7 IGW25T120 include losses off 15Ω 25Ω 35Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =25A, ...

Page 8

... GE 200A 150A 100A 50A 0A 16V 12V V GE Figure 20. Typical short circuit collector current as a function of gate- =25°C) emitter voltage IGW25T120 C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) 14V 16V 18V , - GATE EMITTETR VOLTAGE ≤ 600V, T ≤ 150°C) j Rev ...

Page 9

... I C 20A 20A 0us 0.5us 1.5us Figure 22. Typical turn off behavior = 150° Dynamic test circuit in Figure E) τ 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.52* τ 100ms 9 IGW25T120 600V 400V 200V 0V 1us 1.5us t, TIME =15/0V, R =22Ω 150° Rev. 2.4 Nov. 09 ...

Page 10

... Power Semiconductors ® TrenchStop Series 10 IGW25T120 Rev. 2.4 Nov. 09 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity C 11 IGW25T120 τ τ =180nH σ =39pF. σ Rev. 2.4 Nov. 09 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 12 IGW25T120 Rev. 2.4 Nov. 09 ...

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