IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet

IGBT 1200V 30A 235W TO247-3

IKW15N120T2

Manufacturer Part Number
IKW15N120T2
Description
IGBT 1200V 30A 235W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW15N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
235W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
235W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
240
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKW15N120T2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2
0
Company:
Part Number:
IKW15N120T2
Quantity:
7 200
Part Number:
IKW15N120T2 K15T1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2FKSA1
Manufacturer:
INFINEON
Quantity:
1 001
Low Loss DuoPack : IGBT in 2
Type
IKW15N120T2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current (Tj = 150°C)
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current (Tj = 150°C)
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
1
2)
Power Semiconductors
J-STD-020 and JESD-022
C
C
CE
C
C
GE
C
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 110 C
= 25 C
= 110 C
= 25 C
Short circuit withstand time – 10 s
Designed for :
TrenchStop
Easy paralleling capability due to positive temperature coefficient
in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
= 15V, V
1200V, T
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CE(sat)
CC
j
®
600V, T
1200V
175 C
2
V
nd
CE
generation for 1200 V applications offers :
p
limited by T
j, start
p
15A
limited by T
2)
I
C
with soft, fast recovery anti-parallel EmCon diode
175 C
V
1
CE(sat),Tj=25°C
for target applications
jmax
1.75V
jmax
nd
generation TrenchStop
TrenchStop
175 C
1
T
j,max
Marking Code
K15T1202
®
2
nd
Symbol
V
I
I
-
I
I
V
t
P
T
T
-
C
C p u l s
F
F p u l s
S C
j
s t g
C E
G E
t o t
generation Series
®
technology
IKW15N120T2
PG-TO-247-3
Package
-40...+175
-55...+150
Value
1200
235
260
30
15
60
60
25
15
60
10
20
Rev. 2.1
PG-TO-247-3
G
V
Unit
A
V
W
C
s
Sep 08
C
E

Related parts for IKW15N120T2

IKW15N120T2 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® nd TrenchStop 2 nd generation TrenchStop 1 for target applications V T Marking Code CE(sat),Tj=25°C j,max 1.75V K15T1202 175 C Symbol jmax jmax IKW15N120T2 generation Series ® technology G PG-TO-247-3 Package PG-TO-247-3 Value 1200 235 -40...+175 -55...+150 260 Rev. 2 Unit Sep 08 ...

Page 2

... Conditions Symbol Conditions µ =15A 150 175 150 175 =0.6mA 150 175 =20V =20V, I =15A IKW15N120T2 Max. Value Unit 0.63 K/W 1.12 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.75 2 1.75 - 5.2 5 600 Rev. 2.1 Sep 08 ...

Page 3

... C V =25V f=1MHz =40A =15V =15V 600 = Symbol Conditions =15A 26nH =34pF Energy losses include E “tail” and diode reverse recovery =15A 450A IKW15N120T2 - 1000 - pF - 100 - - Value Unit min. typ. max 362 - - 300 - ns - 1.3 µ 215 - A/ s Rev. 2.1 Sep 08 ...

Page 4

... TrenchStop 2 generation Series =175 C j Symbol Conditions 175 =15A 15nH =34pF Energy losses include E “tail” and diode reverse recovery 175 =15A 460A IKW15N120T2 Value Unit min. typ. max 450 - - 176 - - 460 - ns - 2.65 - µ 123 A/ s Rev. 2.1 Sep 08 ...

Page 5

... TrenchStop 2 10A 1A 0.1A 10kHz 100kHz 1V V Figure 2. Safe operating area = 600V, CE 30A 20A 10A 0A 25°C 125°C 150°C Figure 4. Maximum DC Collector current as 5 IKW15N120T2 generation Series 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 175 C;V =15V 75°C 125° CASE TEMPERATURE ...

Page 6

... TrenchStop 2 60A 50A V GE 40A 30A 20A 10A Figure 6. Typical output characteristic 3.0V 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 10V 12V Figure 8. Typical collector-emitter 6 IKW15N120T2 generation Series 20V =17V 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 0°C 50°C 100°C T ...

Page 7

... Figure 10. Typical switching times as a =41.8Ω, G 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 100°C 150°C Figure 12. Gate-emitter threshold voltage as =600V, =41.8Ω IKW15N120T2 generation Series t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =175° =600V, V ...

Page 8

... 2.50mJ E off 1.25mJ 0.00mJ 100°C 150°C 400V V Figure 16. Typical switching energy losses =600V, =41.8Ω IKW15N120T2 generation Series *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =15A, ...

Page 9

... V CE Figure 18. Typical capacitance as a function 100A 75A 50A 25A 0A 18V 12V V Figure 20. Typical short circuit collector 175° IKW15N120T2 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 10

... Figure 22. Typical turn off behavior = 175 K 3.06*10 -3 3.47* 1.71*10 10 K/W -1 2.63* K/W 10ms 100ms 10µs Figure 24. Diode transient thermal 10 IKW15N120T2 0.4us 0.8us 1.2us t, TIME (V =15/0V, R =41.8Ω 175 Dynamic test circuit in Figure E) D=0 0.291 2.75*10 0.2 0.434 2.60*10 0.363 1.48*10 0.028 1.78*10 0 0.01 ...

Page 11

... T =175°C J -500A/µs -400A/µs T =25°C J -300A/µs -200A/µs -100A/µs -0A/µs 1200A/µs Figure 26. Typical diode peak rate of fall of 11 IKW15N120T2 generation Series T =175° =25°C J 400A/µs 800A/µs 1200A/µs di /dt, DIODE CURRENT SLOPE function of diode current ...

Page 12

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® nd TrenchStop 2 generation Series I =30A 2.0V F 15A 1.5V 7.5A 2A 1.0V 0.5V 0.0V 2V Figure 28. Typical diode forward voltage as a function of junction temperature 12 IKW15N120T2 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 2.1 Sep 08 ...

Page 13

... IKW15N120T2 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.1 Sep 08 ...

Page 14

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKW15N120T2 ® nd TrenchStop 2 generation Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Rev. 2.1 Sep 08 ...

Page 15

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKW15N120T2 ® nd TrenchStop 2 ...

Related keywords