IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet

IGBT 1200V 50A 326W TO247-3

IGW25N120H3

Manufacturer Part Number
IGW25N120H3
Description
IGBT 1200V 50A 326W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW25N120H3

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
326W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.4V
Power Dissipation Max
326W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
HighSpeed3 20-100kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW25N120H3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IGW25N120H3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IGBT
High speed IGBT in Trench and Fieldstop technology
recommended in combination with SiC Diode IDH15S120
IGW25N120H3
1200V high speed switching series third generation
Data sheet
Industrial & Multimarket

Related parts for IGW25N120H3

IGW25N120H3 Summary of contents

Page 1

... IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket ...

Page 2

... IGW25N120H3 G Marking Marking Package Package Marking Marking Package Package G25N120H3 PG-TO247-3 Rev ...

Page 3

... Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 High speed switching series third generation 3 IGW25N120H3 Rev. 1.1, 2011-01-25 ...

Page 4

... T ÝÎ = 25°C T ÝÎ = 175° •Š» †Š = 0V, •Š = 20V ËÙ †Š = 20V, † = 25.0A 4 IGW25N120H3 Value 1200 50.0 25.0 100.0 100.0 ±20 10 326.0 156.0 -40...+175 -55...+150 260 0.6 Max. Value 0.46 40 Value min ...

Page 5

... E ÓËË V •Š = 0.0/15.0V • = 3.0Â, ÿ = 80nH, E ÚÙ C ÿ = 67pF L ÿ, C ÿ from Fig. E Energy losses include “tail” and diode (IDH15S120) reverse recovery. 5 IGW25N120H3 Value Unit min. typ. max. - 1430 - - 115 13.0 ...

Page 6

... I † = 10.0A, E ÓËË V •Š = 0.0/15.0V • = 3.0Â, ÿ = 80nH, E ÚÙ C ÿ = 67pF L C ÿ, ÿ from Fig. E Energy losses include “tail” and diode (IDH15S120) reverse recovery. 6 IGW25N120H3 Value Unit min. typ. max 347 - ...

Page 7

... Figure 4. Collector current as a function of case Figure 4. Figure 4. Figure 4. Collector current as a function of case Collector current as a function of case Collector current as a function of case temperature temperature temperature temperature V ( •Šú15V, 7 IGW25N120H3 10µs 50µ 100 1000 †=25°C, Îù175°C; •Š=15V ...

Page 8

... Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage as a function of junction temperature as a function of junction temperature as a function of junction temperature as a function of junction temperature V ( •Š=15V) 8 IGW25N120H3 100 125 150 Î, JUNCTION TEMPERATURE [°C] Rev. 1.1, 2011-01-25 ...

Page 9

... Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a function of junction temperature function of junction temperature function of junction temperature function of junction temperature I ( †=0.85mA) 9 IGW25N120H3 tÁñÓËËò tË tÁñÓÒò tØ •, GATE RESISTOR [Â] ...

Page 10

... Typical switching energy losses as a function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage I †=25A, (ind. load, R •=23Â, test circuit in Fig IGW25N120H3 EÓËË EÓÒ EÚÙ •, GATE RESISTOR [Â] ...

Page 11

: :L]] : :< :< -dd b!#8 b!# 0<!1%9!"# " # 4200 0<!1%9!"# " # 4200 0 0 b!#8 b!# 0<!1%9!"# ...

Page 12

... Short circuit withstand time as a function Short circuit withstand time as a function Short circuit withstand time as a function of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage V ( †Šù600V, start at 11 IGW25N120H3 CÍÙÙ CÓÙÙ CØÙÙ Î ...

Page 13

... Figure 21. IGBT transient thermal impedance IGBT transient thermal impedance Figure 21. Figure 21. IGBT transient thermal impedance IGBT transient thermal impedance Ô/T) High speed switching series third generation D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 4 5 0.05925 5.7E-3 0.0336145 0.2730749 0.01 0 IGW25N120H3 Rev. 1.1, 2011-01-25 ...

Page 14

... High speed switching series third generation PG-TO247-3 13 IGW25N120H3 Rev. 1.1, 2011-01-25 ...

Page 15

... High speed switching series third generation 14 IGW25N120H3 τ Rev. 1.1, 2011-01-25 ...

Page 16

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. High speed switching series third generation 15 IGW25N120H3 Rev. 1.1, 2011-01-25 ...

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