IKW25N120T2 Infineon Technologies, IKW25N120T2 Datasheet

IGBT 1200V 50A 349W TO247-3

IKW25N120T2

Manufacturer Part Number
IKW25N120T2
Description
IGBT 1200V 50A 349W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW25N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
349W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
349W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW25N120T2
Manufacturer:
INFINEON
Quantity:
4 500
Part Number:
IKW25N120T2
Manufacturer:
ST
Quantity:
3 000
Part Number:
IKW25N120T2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW25N120T2
0
Part Number:
IKW25N120T2 K25T1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKW25N120T2FKSA1
Quantity:
2 400
Low Loss DuoPack : IGBT in 2
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKW25N120T2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current (T
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current (T
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
1
2)
Power Semiconductors
J-STD-020 and JESD-022
C
C
CE
C
C
GE
C
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 110 C
= 25 C
= 110 C
= 25 C
Short circuit withstand time – 10 s
Designed for :
TrenchStop
Easy paralleling capability due to positive temperature coefficient
in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
= 15V, V
1200V, T
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CE(sat)
CC
j
®
600V, T
1200V
175 C
2
V
nd
CE
generation for 1200 V applications offers :
p
j
=150°C)
limited by T
j
=150°C)
j, start
p
25A
limited by T
2)
I
C
with soft, fast recovery anti-parallel EmCon diode
175 C
V
1
CE(sat),Tj=25°C
for target applications
jmax
1.7V
jmax
nd
generation TrenchStop
TrenchStop
175 C
1
T
j,max
Marking Code
K25T1202
®
2
nd
Symbol
V
I
I
-
I
I
V
t
P
T
T
-
C
C p u l s
F
F p u l s
S C
j
s t g
C E
G E
t o t
generation Series
®
IKW25N120T2
PG-TO-247-3
Package
-40...+175
-55...+150
Value
1200
100
100
100
349
260
50
25
40
25
10
20
Rev. 2.1
PG-TO-247-3
G
V
Unit
A
V
W
C
s
Sep 08
C
E

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IKW25N120T2 Summary of contents

Page 1

... TrenchStop 1 for target applications V T Marking Code CE(sat),Tj=25°C j,max 1.7V K25T1202 175 C Symbol jmax jmax IKW25N120T2 generation Series ® G PG-TO-247-3 Package PG-TO-247-3 Value 1200 50 25 100 100 40 25 100 20 10 349 -40...+175 -55...+150 260 Rev. 2 Unit Sep 08 ...

Page 2

... Conditions Symbol Conditions µ =25A 150 175 150 175 =1.0mA 175 =20V =20V, I =25A IKW25N120T2 Max. Value Unit 0.43 K/W 0.81 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.65 2 1.65 - 5.2 5 200 Rev. 2.1 Sep 08 ...

Page 3

... C V =15V =15V 600 = Symbol Conditions =25A 05nH =39pF Energy losses include E “tail” and diode reverse recovery =25A 1050 IKW25N120T2 - 1600 - pF - 155 - - 120 - 150 115 Value Unit min. typ. max 265 - - 195 - ns - 2.05 µ 475 - A/ s Rev. 2.1 Sep 08 ...

Page 4

... TrenchStop 2 generation Series =175 C j Symbol Conditions 175 =25A 75nH =67pF Energy losses include E “tail” and diode reverse recovery 175 =25A 1000 IKW25N120T2 Value Unit min. typ. max 340 - - 164 - - 290 - ns - 3.65 - µ 330 A/ s Rev. 2.1 Sep 08 ...

Page 5

... V CE Figure 2. Safe operating area = 600V, CE 50A 40A 30A 20A 10A 0A 25°C 125°C 150°C Figure 4. Maximum collector current IKW25N120T2 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE ( 175 C;V =15V 75°C 125° CASE TEMPERATURE C function of case temperature ...

Page 6

... Power Semiconductors ® nd TrenchStop 2 generation Series 100A 80A V 60A 40A 20A Figure 6. Typical output characteristic 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 0.5V 10V 12V 0.0V Figure 8. Typical collector-emitter 6 IKW25N120T2 20V =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE (T = 175° =12. 0°C 50°C 100° ...

Page 7

... Figure 10. Typical switching times as a =16.4Ω, G 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 100°C 150°C Figure 12. Gate-emitter threshold voltage as =600V, =16.4Ω IKW25N120T2 generation Series t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =175° ...

Page 8

... 2.5mJ E off E E 0.0mJ 400V 100°C 150°C V Figure 16. Typical switching energy losses =600V, =16.4Ω IKW25N120T2 generation Series *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =25A ...

Page 9

... V CE Figure 18. Typical capacitance as a function 200A 150A 100A 50A 0A 18V 12V V Figure 20. Typical short circuit collector 175° IKW25N120T2 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 10

... Figure 22. Typical turn off behavior = 175 K 2.77*10 -3 3.21*10 -2 1.73*10 -1 2.77* K 10ms 100ms 10µs Figure 24. Diode transient thermal 10 IKW25N120T2 generation Series 0.4us 0.8us 1.2us t, TIME (V =15/0V, R =16.4Ω 175 Dynamic test circuit in Figure E) D=0.5 0 0.198 3.31*10 0.1 0.301 3.33*10 0.287 1.68*10 0.019 2.49*10 0.05 0. 0.01 C ...

Page 11

... Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V Dynamic test circuit in Figure E) 11 IKW25N120T2 T =175° =25°C J 800A/µs 1200A/µs 1600A/µs 2000A/µs /dt, DIODE CURRENT SLOPE ...

Page 12

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® nd TrenchStop 2 generation Series 2.5V I =50A F 2.0V 25A 1.5V 12.5A 1.0V 3A 0.5V 0.0V 3V 0° JUNCTION TEMPERATURE J Figure 28. Typical diode forward voltage as a function of junction temperature 12 IKW25N120T2 50°C 100°C 150°C Rev. 2.1 Sep 08 ...

Page 13

... IKW25N120T2 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.1 Sep 08 ...

Page 14

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKW25N120T2 ® nd TrenchStop 2 generation Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Rev. 2.1 Sep 08 ...

Page 15

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKW25N120T2 ® nd TrenchStop 2 ...

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