ISL9V2040D3ST Fairchild Semiconductor, ISL9V2040D3ST Datasheet

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ISL9V2040D3ST

Manufacturer Part Number
ISL9V2040D3ST
Description
IGBT N-CH IGNTN 400V 10A TO252AA
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V2040D3ST

Voltage - Collector Emitter Breakdown (max)
430V
Vce(on) (max) @ Vge, Ic
1.9V @ 4V, 6A
Current - Collector (ic) (max)
10A
Power - Max
130W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ISL9V2040D3STTR
ISL9V2040D3ST_NL
ISL9V2040D3ST_NLTR
ISL9V2040D3ST_NLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9V2040D3ST
Manufacturer:
ON/安森美
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
G
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARK
General Description
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49444
Device Maximum Ratings
Package
JEDEC TO-252AA
E
E
Symbol
E
BV
BV
SCIS150
V
I
T
SCIS25
ESD
T
I
C110
C25
GEM
P
D-Pak
T
STG
T
pkg
COLLECTOR
CER
ECS
D
J
L
(FLANGE)
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
At Starting T
At Starting T
Collector Current Continuous, At T
Collector Current Continuous, At T
Gate to Emitter Voltage Continuous
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
G
TM
E
JEDEC TO-263AB
200mJ, 400V, N-Channel Ignition IGBT
D²-Pak
J
J
= 25°C, I
= 150°C, I
COLLECTOR
(FLANGE)
SCIS
SCIS
C
T
= 25°C
A
= 11.5A, L = 3.0mHy
JEDEC TO-220AB
= 25°C unless otherwise noted
= 8.9A, L = 3.0mHy
C
> 25°C
Parameter
C
C
= 25°C, See Fig 9
= 110°C, See Fig 9
C
= 1 mA)
Symbol
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D - Pak package available
• SCIS Energy = 200mJ at T
• Logic Level Gate Drive
E
C
G
C
= 10 mA)
GATE
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
R
R
J
1
2
= 25
-40 to 175
-40 to 175
o
Ratings
C
0.87
430
200
120
±10
130
300
260
24
10
10
4
EMITTER
COLLECTOR
October 2004
Units
W/°C
mJ
mJ
°C
°C
°C
°C
kV
W
V
V
V
A
A

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ISL9V2040D3ST Summary of contents

Page 1

... L T Max Lead Temp for Soldering (Package Body for 10s) pkg ESD Electrostatic Discharge Voltage at 100pF, 1500 ©2004 Fairchild Semiconductor Corporation Applications • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features • Space saving D - Pak package available • SCIS Energy = 200mJ at T • ...

Page 2

... Package Marking and Ordering Information Device Marking Device V2040D ISL9V2040D3ST V2040S ISL9V2040S3ST V2040P ISL9V2040P3 V2040D ISL9V2040D3S V2040S ISL9V2040S3S Electrical Characteristics Symbol Parameter Off State Characteristics BV Collector to Emitter Breakdown Voltage I CER BV Collector to Emitter Breakdown Voltage I CES BV Emitter to Collector Breakdown Voltage I ECS BV Gate to Emitter Breakdown Voltage ...

Page 3

... Junction Temperature 1.0 2 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs Collector Current ©2004 Fairchild Semiconductor Corporation 20 = 5V,V = 14V 25° Voltages of <430V 0 0 120 140 160 180 200 Figure 2. Self Clamped Inductive Switching 2.4 = 3.7V 2.2 2.0 1 ...

Page 4

... ECS 1000 100 300V CES 250V CES 0.1 -50 - JUNCTION TEMPERATURE (°C) J Figure 11. Leakage Current vs Junction Temperature ©2004 Fairchild Semiconductor Corporation (Continued) 30 DUTY CYCLE < 0.5%, V PULSE DURATION = 250µ 175° 3.0 4.0 1.0 Figure 8. Transfer Characteristics 2 4.0V GE 2.2 2.0 1.8 1 ...

Page 5

... Figure 15. Breakdown Voltage vs Series Gate Resistance 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2004 Fairchild Semiconductor Corporation (Continued) 8 FREQUENCY = 1 MHz 175° 25°C J 100 R , SERIES GATE RESISTANCE ( ...

Page 6

... Test Circuit and Waveforms R G PULSE DUT GEN G Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P REQUIRED PEAK Figure 19. Unclamped Energy Test Circuit ©2004 Fairchild Semiconductor Corporation Figure 18 DUT 0.01 Figure 20. Unclamped Energy Waveforms R or LOAD DUT - E and t Switching Test Circuit ...

Page 7

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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