SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet
SGP5N60RUFDTU
Specifications of SGP5N60RUFDTU
Related parts for SGP5N60RUFDTU
SGP5N60RUFDTU Summary of contents
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... Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • Short circuit rated 10us @ T • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : TO-220 ...
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... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2002 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA ...
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... Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2002 Fairchild Semiconductor Corporation 20 15V 16 12 12V 10V [V] CE Fig 2. Typical Saturation Voltage Characteristics 10 8 10A Duty cycle : 50% ...
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... Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter = ± 15V 25℃ ━━ 125℃ ------ C 100 Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Common Emitter Common Emitter 1MHz 25℃ 25℃ ━━ 125℃ ------ 100 C Cies Coes 10 ...
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... Single Nonrepetitive Pulse T = 25℃ C Curves must be derated linearly with increase in temperature 0 Collector-Emitter Voltage, V Fig 15. SOA Characteristic 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0. ©2002 Fairchild Semiconductor Corporation 15 Common Emitter Eon [A] C Fig 14. Gate Charge Characteristics 40 50us 100us 1㎳ 1 ...
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... Forward Voltage Drop, V Fig 18. Forward Characteristics 500 V = 200V 25℃ ━━ T 400 100℃ ------ C 300 200 100 0 100 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 V = 200V 25℃ ━━ 100℃ ------ 100 [V] F Fig 19. Reverse Recovery Current 100 V ...
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... Package Dimension 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters SGP5N60RUFD Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...