SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet

IGBT W/DIODE 600V 5A

SGP5N60RUFDTU

Manufacturer Part Number
SGP5N60RUFDTU
Description
IGBT W/DIODE 600V 5A
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SGP5N60RUFDTU

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 5A
Current - Collector (ic) (max)
8A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
©2002 Fairchild Semiconductor Corporation
SGP5N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
T
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
SC
J
L
CES
GES
D
Symbol
JC
JC
JA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
Description
Parameter
TO-220
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
Features
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
= 25 C
= 100 C
= 100 C
= 100 C
= 25 C
= 100 C
G
G
SGP5N60RUFD
Typ.
--
--
--
-55 to +150
-55 to +150
600
300
15
56
10
60
25
C
C
8
5
8
E
E
20
CE(sat)
rr
C
= 37ns (typ.)
= 100 C, V
Max.
1.25
62.5
2.0
= 2.2 V @ I
IGBT
GE
SGP5N60RUFD Rev. A1
C
= 15V
Units
= 5A
Units
us
C/W
C/W
C/W
W
W
V
V
A
A
A
A
A
C
C
C

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SGP5N60RUFDTU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • Short circuit rated 10us @ T • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : TO-220 ...

Page 2

... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2002 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA ...

Page 3

... Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2002 Fairchild Semiconductor Corporation 20 15V 16 12 12V 10V [V] CE Fig 2. Typical Saturation Voltage Characteristics 10 8 10A Duty cycle : 50% ...

Page 4

... Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter = ± 15V 25℃ ━━ 125℃ ------ C 100 Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Common Emitter Common Emitter 1MHz 25℃ 25℃ ━━ 125℃ ------ 100 C Cies Coes 10 ...

Page 5

... Single Nonrepetitive Pulse T = 25℃ C Curves must be derated linearly with increase in temperature 0 Collector-Emitter Voltage, V Fig 15. SOA Characteristic 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0. ©2002 Fairchild Semiconductor Corporation 15 Common Emitter Eon [A] C Fig 14. Gate Charge Characteristics 40 50us 100us 1㎳ 1 ...

Page 6

... Forward Voltage Drop, V Fig 18. Forward Characteristics 500 V = 200V 25℃ ━━ T 400 100℃ ------ C 300 200 100 0 100 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 V = 200V 25℃ ━━ 100℃ ------ 100 [V] F Fig 19. Reverse Recovery Current 100 V ...

Page 7

... Package Dimension 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters SGP5N60RUFD Rev. A1 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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