FGA15N120ANDTU Fairchild Semiconductor, FGA15N120ANDTU Datasheet

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FGA15N120ANDTU

Manufacturer Part Number
FGA15N120ANDTU
Description
IGBT NPT TRENCH 1200V 15A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGA15N120ANDTU

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
24A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA15N120ANDTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FGA15N120ANDTU
Quantity:
4 800
©2003 Fairchild Semiconductor Corporation
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
Symbol
JC
JC
JA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
Description
TO-3PN
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
= 25 C
= 100 C
= 100 C
= 25 C
= 100 C
G
G
FGA15N120AND
Typ.
--
--
--
-55 to +150
-55 to +150
1200
200
300
24
15
45
15
45
80
20
CE(sat)
C
C
E
E
rr
= 210ns (typ.)
Max.
0.63
2.88
= 2.4 V @ I
40
IGBT
FGA15N120AND Rev. A
C
Units
Units
= 15A
C/W
C/W
C/W
W
W
V
V
A
A
A
A
A
C
C
C

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FGA15N120ANDTU Summary of contents

Page 1

... Symbol R (IGBT) Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2003 Fairchild Semiconductor Corporation Features • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : t TO-3PN unless otherwise noted C Description @ T ...

Page 2

... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2003 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 3mA 1200 0V 3mA ...

Page 3

... Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ 24A 4 15A Gate-Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2003 Fairchild Semiconductor Corporation 80 Common Emitter 17V V GE 15V T = 25℃ 125℃ 12V 10V [V] CE Fig 2. Typical Saturation Voltage Characteristics ...

Page 4

... Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter = ± 15V 25℃ 125℃ C 100 td(on Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation Common Emitter 1MHz 25℃ C 100 [V] CE Fig 8. Turn-On Characteristics vs. Gate Common Emitter 15A 25℃ C ...

Page 5

... Collector - Emitter Voltage, V Fig 15. SOA Characteristics 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation 16 Common Emitter Eon Eoff [A] C Fig 14. Gate Charge Characteristics ...

Page 6

... Forward Voltage , V Fig 18. Forward Characteristics 7000 6000 di/dt = 200A/ s 5000 4000 di/dt = 100A/ s 3000 2000 1000 Forward Current , I Fig 20. Stored Charge ©2003 Fairchild Semiconductor Corporation 125 ℃ ℃ 1.6 2.0 2.4 [V] F Fig 19. Reverse Recovery Current 400 ...

Page 7

... Mechanical Dimensions ©2003 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters FGA15N120AND Rev. A ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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