IGBT W/DIODE 600V 55A TO-247AC

 

IRGPC50UD2

Manufacturer Part NumberIRGPC50UD2
DescriptionIGBT W/DIODE 600V 55A TO-247AC
ManufacturerInternational Rectifier
IRGPC50UD2 datasheets

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Specifications of IRGPC50UD2

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic3V @ 15V, 27A
Current - Collector (ic) (max)55APower - Max200W
Input TypeStandardMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-  
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INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED
soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
I
Clamped Inductive Load Current
LM
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
R
Junction-to-Case - IGBT
JC
R
Junction-to-Case - Diode
JC
R
Case-to-Sink, flat, greased surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Wt
Weight
IRGPC50UD2
UltraFast CoPack IGBT
C
G
@V
E
n-channel
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Min.
Typ.
—
—
—
—
—
0.24
—
—
—
6 (0.21)
C-725
PD - 9.802A
V
= 600V
CES
V
3.0V
CE(sat)
= 15V, I
= 27A
GE
C
T O-247AC
Units
V
A
V
W
°C
Max.
Units
0.64
0.83
°C/W
—
40
—
g (oz)
Revision 1

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IRGPC50UD2 Summary of contents

  • Page 1

    ... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC50UD2 UltraFast CoPack IGBT n-channel Max. 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf• ...

  • Page 2

    ... IRGPC50UD2 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

  • Page 3

    ... Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 T = 150° ° Fig Typical Transfer Characteristics C-727 IRGPC50UD2 ycle : ° °C sin rive ecified Tu rn -on los se s inc ffe cts o f rev erse recov ery P ower D issipation = 40W 25° 100V CC 5µ ...

  • Page 4

    ... IRGPC50UD2 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0.5 0 0.2 0 0.1 0 SIN LSE ( 0.02 0.01 0.01 0.00001 0.0 001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 3 µ 2.5 2.0 1.5 1.0 -60 -40 -20 125 150 ase Tem perature (°C ) Fig ...

  • Page 5

    ... R , Gate Resistance ( ) G Fig Typical Switching Losses vs. Gate Resistance SHORTED Fig Typical Gate Charge vs. 100 0 -60 -40 W Fig Typical Switching Losses vs. C-729 IRGPC50UD2 = tal Gate-to-Emitter Voltage = 5 = 15V = 480V I = 54A 27A 14A C - 100 120 140 160 T , Case Temperature (°C) C Case Temperature ...

  • Page 6

    IRGPH50UD2 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter ...

  • Page 7

    ... Fig Typical Stored Charge vs. di 100 10 1 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 V = 200V T = 125° 25°C 1000 I = 10A F 100 1000 100 /dt Fig Typical di f C-731 IRGPC50UD2 V = 200V 125° 25° 50A 25A 10A F di /dt - (A/µ 10A 25A 50A F di /dt - (A/µ ...

  • Page 8

    ... IRGPC50UD2 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) Refer to Section D for the following: Appendix D: Section D - page D-6 Fig ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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