IRGPC30FD2 International Rectifier, IRGPC30FD2 Datasheet
IRGPC30FD2
Specifications of IRGPC30FD2
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IRGPC30FD2 Summary of contents
Page 1
... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC30FD2 Fast CoPack IGBT C V CES V CE(sat 15V n-channel TO -2 47AC Max. 600 31 17 ...
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... IRGPC30FD2 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES Temperature Coeff. of Breakdown Voltage---- 0. (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage---- GE(th) J Forward Transconductance „ Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Output Characteristics Frequency (kHz) of fundamental) RMS 1000 100 T = 150° 25° 0 Fig Typical Transfer Characteristics IRGPC30FD2 Duty cycle: 50 125° 90°C sink Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 24W 100V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...
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... IRGPC30FD2 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 3 15V V = 15V GE GE 80µs PULSE WIDTH 3.0 2.5 2 ...
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... R , Gate Resistance ( ) G Fig Typical Switching Losses vs. Gate Resistance SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRGPC30FD2 = 400V = 17A Total Gate Charge (nC) g Gate-to-Emitter Voltage = 23 = 15V = 480V I = 34A 17A 8. Case Temperature (°C) C Case Temperature 30 A ...
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... IRGPC30FD2 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1000 100 100 T = 150° 125° 25° 0.4 0.8 1.2 1.6 2.0 Forward Voltage Drop - 20V GE = 125°C ...
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... Fig Typical Stored Charge vs. di 100 V = 200V T = 125° 25° 6. 6. 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 1000 I = 24A F 100 10 1000 100 /dt Fig Typical di f IRGPC30FD2 24A 12A F di /dt - (A/µ 200V 125° 25° 6. 12A 24A F di /dt - (A/µs) f /dt vs. di ...
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... IRGPC30FD2 Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce td(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) +Vge 10% Vce Ic D.U.T. td(off d(off) f Fig ...
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... C - 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) 2.60 (.102 2.20 (.087) Dimensions in Millimeters and (Inches) IRGPC30FD2 @25°C C Test Circuit NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC ...