IRGPC50U International Rectifier, IRGPC50U Datasheet

IGBT UFAST 600V 55A TO-247AC

IRGPC50U

Manufacturer Part Number
IRGPC50U
Description
IGBT UFAST 600V 55A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPC50U

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 27A
Current - Collector (ic) (max)
55A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

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Price
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IR
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INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Thermal Resistance
Features
• Switching-loss rating includes all "tail" losses
• HEXFRED
• Optimized for high operating frequency (over 5kHz)
Absolute Maximum Ratings
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
C
C
CM
LM
F
FM
See Fig. 1 for Current vs. Frequency curve
J
CES
GE
D
D
STG
@ T
JC
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
soft ultrafast diodes
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
C-725
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
C
E
IRGPC50UD2
10 lbf•in (1.1 N•m)
-55 to +150
UltraFast CoPack IGBT
Max.
6 (0.21)
± 20
600
220
220
220
200
Typ.
55
27
25
78
0.24
@V
V
T O-247AC
GE
V
CE(sat)
CES
= 15V, I
PD - 9.802A
Max.
0.64
0.83
= 600V
40
3.0V
C
= 27A
Revision 1
Units
Units
g (oz)
°C/W
°C
W
V
A
V

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IRGPC50U Summary of contents

Page 1

... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC50UD2 UltraFast CoPack IGBT n-channel Max. 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf• ...

Page 2

... IRGPC50UD2 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

Page 3

... Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 T = 150° ° Fig Typical Transfer Characteristics C-727 IRGPC50UD2 ycle : ° °C sin rive ecified Tu rn -on los se s inc ffe cts o f rev erse recov ery P ower D issipation = 40W 25° 100V CC 5µ ...

Page 4

... IRGPC50UD2 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0.5 0 0.2 0 0.1 0 SIN LSE ( 0.02 0.01 0.01 0.00001 0.0 001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 3 µ 2.5 2.0 1.5 1.0 -60 -40 -20 125 150 ase Tem perature (°C ) Fig ...

Page 5

... R , Gate Resistance ( ) G Fig Typical Switching Losses vs. Gate Resistance SHORTED Fig Typical Gate Charge vs. 100 0 -60 -40 W Fig Typical Switching Losses vs. C-729 IRGPC50UD2 = tal Gate-to-Emitter Voltage = 5 = 15V = 480V I = 54A 27A 14A C - 100 120 140 160 T , Case Temperature (°C) C Case Temperature ...

Page 6

IRGPH50UD2 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter ...

Page 7

... Fig Typical Stored Charge vs. di 100 10 1 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 V = 200V T = 125° 25°C 1000 I = 10A F 100 1000 100 /dt Fig Typical di f C-731 IRGPC50UD2 V = 200V 125° 25° 50A 25A 10A F di /dt - (A/µ 10A 25A 50A F di /dt - (A/µ ...

Page 8

... IRGPC50UD2 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) Refer to Section D for the following: Appendix D: Section D - page D-6 Fig ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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