IRGPC50U International Rectifier, IRGPC50U Datasheet - Page 2

• Manufacturer Part Number: IRGPC50U
• Description: IGBT UFAST 600V 55A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRGPC50U

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 27A
• Current - Collector (ic) (max): 55A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

IRGPC50UD2
Electrical Characteristics @ T
Switching Characteristics @ T
Notes:
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
V
fe
E
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
Repetitive rating; V
limited by max. junction temperature.
( See fig. 20 )
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
GE
=20V, pulse width
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
V
Pulse width
R
CC
G
= 5.0 , ( See fig. 19 )
Min. Typ. Max. Units
Min. Typ. Max. Units
600
=80%(V
3.0
C-726
—
—
—
—
—
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2900
0.60
110
210
150
360
230
330
105
112
420 1200
250
160
1.9
2.4
1.9
-13
1.3
1.2
1.4
1.6
3.0
4.5
4.5
8.0
24
17
53
73
71
73
67
13
40
50
—
—
—
—
—
CES
80µs; duty factor
), V
6500
±100
250
140
320
280
160
375
3.0
5.5
1.7
1.5
4.5
21
70
75
10
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
GE
=20V, L=10µH,
mV/°C V
V/°C
A/µs
µA
nA
nC
mJ
mJ
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
See Fig. 8
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
CC
= 27A
= 55A
= 27A, T
= 25A
= 25A, T
= 27A
= 27A, V
= 27A, V
0.1%.
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
= 150°C
= 150°C
Conditions
Conditions
See Fig.
See Fig.
See Fig.
See Fig.
= 250µA
= 1.0mA
G
G
C
= 250µA
= 250µA
= 480V
= 480V
= 600V, T
Pulse width 5.0µs,
single shot.
= 600V
= 27A
= 5.0
= 5.0
17
See Fig. 9, 10, 11, 18
14
15
16
See Fig. 7
See Fig. 2, 5
V
See Fig. 13
J
di/dt = 200A/µs
GE
V
= 150°C
I
F
R
= 15V
= 25A
= 200V