IRGPC40S International Rectifier, IRGPC40S Datasheet

IGBT STD 600V 50A TO-247AC

IRGPC40S

Manufacturer Part Number
IRGPC40S
Description
IGBT STD 600V 50A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPC40S

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 31A
Current - Collector (ic) (max)
50A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGPC40S
Manufacturer:
IR
Quantity:
12 500
INSULATED GATE BIPOLAR TRANSISTOR
Thermal Resistance
Absolute Maximum Ratings
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to
400Hz)
curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
LM
CM
J
STG
CES
GE
ARV
D
D
@ T
@ T
CS
JC
JA
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
See Fig. 1 for Current vs. Frequency
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
G
n-channel
Min.
------
------
------
------
300 (0.063 in. (1.6mm) from case)
E
C
10 lbf•in (1.1N•m)
-55 to +150
Max.
6 (0.21)
IRGPC40S
600
240
240
±20
160
Standard Speed IGBT
50
31
15
65
------
------
Typ.
0.24
@V
TO -2 4 7 AC
V
V
GE
CE(sat)
CES
= 15V, I
Max.
------
------
0.77
= 600V
PD - 9.692
40
1.8V
C
= 31A
Units
Units
g (oz)
°C/W
mJ
°C
W
V
A
V

Related parts for IRGPC40S

IRGPC40S Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC40S Standard Speed IGBT CE(sat n-channel Max. 600 50 31 240 240 ±20 15 ...

Page 2

... IRGPC40S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ (BR)ECS Temperature Coeff. of Breakdown Voltage---- 0. (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance … Zero Gate Voltage Collector Current CES ...

Page 3

... Gate drive as specified Power Dissipation = 35W 1 f, Frequency (kHz) of fundamental; for triangular wave, I=I RMS 1000 100 T = 150° Fig Typical Transfer Characteristics IRGPC40S Triangular wave: Clamp voltage: 80% of rated 10 100 ) 25° 150° 100V CC 5µs PULSE WIDTH 10 15 ...

Page 4

... IRGPC40S 70 LIMITED BY PACKAGE 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 3 15V V = 15V GE GE 80µs PULSE WIDTH 2.5 2 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance SHORTED 100 0 Fig Typical Gate Charge vs. 100 -60 -40 -20 W Fig Typical Switching Losses vs. IRGPC40S = 400V = 31A Total Gate Charge (nC) g Gate-to-Emitter Voltage = 10 = 15V = 480V I = 62A 31A 16A 100 120 140 160 T , Case Temperature (°C) C Case Temperature 60 ...

Page 6

... IRGPC40S 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 15.90 ( .626) 15.30 ( .602 20.30 (.800) 19.70 (.775 14.80 (.583) * 14.20 (.559) 2.40 (.094) 1.40 (.056) 3X 2.00 (.079) 1.00 (.039) 2X 0.25 ( .010) 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) ...

Page 7

... 10 90% 10 d(on D.U. 480V R R Fig. 13b - D.U. 90% t d(off t=5µs E off off IRGPC40S 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T Fig. 14b - Switching Loss Waveforms ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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