IGBT UFAST 600V 40A TO-220AB

IRG4BC40U

Manufacturer Part NumberIRG4BC40U
DescriptionIGBT UFAST 600V 40A TO-220AB
ManufacturerInternational Rectifier
IRG4BC40U datasheet
 


Specifications of IRG4BC40U

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.1V @ 15V, 20A
Current - Collector (ic) (max)40APower - Max160W
Input TypeStandardMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-Other names*IRG4BC40U
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (175Kb)Embed
Next
Features
Features
Features
Features
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, flat, greased surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Min.
Typ.
------
------
------
0.50
------
------
------
2 (0.07)
= 600V
= 1.72V
= 20A
C
Units
V
A
V
mJ
W
°C
Max.
Units
0.77
------
°C/W
80
------
g (oz)
1
4/17/2000

IRG4BC40U Summary of contents

  • Page 1

    Features Features Features Features Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...

  • Page 2

    Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage ---- /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...

  • Page 3

    wave : ...

  • Page 4

    T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.2 ...

  • Page 5

    ...

  • Page 6

    R = 10Ω 150° 480V 15V G E 3.0 2.0 1.0 0 Collector-to-Emitter Current (A) C Fig Typical ...

  • Page 7

    L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

  • Page 8

    (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (.6 ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...