IRG4BC40S International Rectifier, IRG4BC40S Datasheet

IGBT STD 600V 60A TO-220AB

IRG4BC40S

Manufacturer Part Number
IRG4BC40S
Description
IGBT STD 600V 60A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC40S

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.5V @ 15V, 31A
Current - Collector (ic) (max)
60A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC40S
Manufacturer:
IR
Quantity:
2 547
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Standard: optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
www.irf.com
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
parameter distribution and higher efficiency than
ARV
J
STG
θJC
θCS
θJA
CES
GE
D
D
voltage and low operating frequencies ( < 1kHz)
industry-standard Generation 3 IR IGBTs
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
2.0 (0.07)
Typ.
0.50
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
IRG4BC40S
Standard Speed IGBT
TO-220AB
Max.
± 20
600
120
120
160
60
31
15
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
80
CES
PD - 91455B
= 15V, I
= 600V
= 1.32V
C
= 31A
Units
g (oz)
Units
4/17/2000
°C/W
mJ
W
°C
V
V
A
1

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IRG4BC40S Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com PD - 91455B IRG4BC40S Standard Speed IGBT C V CES V CE(on) typ 15V n-channel TO-220AB Max. 600 60 31 120 120 ± ...

Page 2

... IRG4BC40S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate driv e as spec ified tio Frequency (kHz) of fundamental; for triangular wave, I=I RMS 15V Fig Typical Transfer Characteristics IRG4BC40S T ria 150° 25° 50V C C 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC40S Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V µ 1 -60 -40 - tio (°C ) Fig Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec www.irf.com ...

Page 5

... C E Fig Typical Capacitance vs. Collector-to-Emitter Voltage 7 ° 7.7 C 7.6 7.5 7.4 7 ate R esistan ce ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs -60 -40 Fig Typical Switching Losses vs. IRG4BC40S = Total rge ( Gate-to-Emitter Voltage = 10 Ω - nctio erature (° Junction Temperature ...

Page 6

... IRG4BC40S Ω 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ° TIN Collecto r-to-E m itter V oltage (V ) Fig Turn-Off SOA www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC40S 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC40S Case Outline and Dimensions — TO-220AB (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (. (. 1.15 (.045 (. 4.06 (.160 ) (. 3.55 (.140 ) 0.93 (.037 0.69 (.027 (. (. (. (. CONFORMS TO JEDEC OUTLINE TO-220AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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