IRG4PH40K International Rectifier, IRG4PH40K Datasheet

IGBT UFAST 1200V 30A TO-247AC

IRG4PH40K

Manufacturer Part Number
IRG4PH40K
Description
IGBT UFAST 1200V 30A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH40K

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Package
TO-247
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
30
Ic @ 100c (a)
15
Vce(on)@25c Typ (v)
2.74
Vce(on)@25c Max (v)
3.40
Ets Typ (mj)
2.39
Ets Max (mj)
2.9
Pd @25c (w)
160
Environmental Options
PbF and Leaded
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4PH40K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40K
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PH40KD
Manufacturer:
IR
Quantity:
505
Part Number:
IRG4PH40KD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PH40KDPBF
Manufacturer:
EXAR
Quantity:
340
Part Number:
IRG4PH40KPBF
Manufacturer:
International Rectifier
Quantity:
135
Benefits
Thermal Resistance
Features
Features
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
• This part replaces the IRGPH40K and IRGPH40M
Absolute Maximum Ratings
Features
Features
Features
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
www.irf.com
C
C
CM
LM
sc
t
V
switching speed
distribution and higher efficiency than previous
generations
HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT
devices
density motor controls possible
J
STG
sc
CES
GE
ARV
D
D
θJC
θCS
θJA
GE
@ T
@ T
@ T
@ T
=10µs, V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
ultrafast, ultrasoft recovery diodes for
= 720V , T
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
J
= 125°C,
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case)
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to +150
IRG4PH40K
Max.
TO-247AC
1200
±20
180
160
30
15
60
60
10
65
Short Circuit Rated
@V
V
CE(on) typ.
V
Max.
GE
0.77
UltraFast IGBT
–––
–––
CES
40
= 15V, I
= 1200V
= 2.74V
C
Units
= 15A
g (oz)
°C/W
2/7/2000
Units
mJ
µs
°C
W
V
A
V
1

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IRG4PH40K Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH40K Short Circuit Rated UltraFast IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 1200 30 ...

Page 2

... IRG4PH40K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate drive as spec ified tio Frequency (kHz) (Load Current = I of fundamental) RMS 100 Fig Typical Transfer Characteristics IRG4PH40K T ria ° 150 ° 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PH40K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V PULSE WIDTH 3.5 3.0 2.5 2.0 125 ...

Page 5

... G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs.  100 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH40K = 400V = 15A Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm 10 = 15V = 960V  7 100 120 140 160 ° Junction Temperature ( C ) ...

Page 6

... IRG4PH40K  15 Ω Ohm 150 C ° 960V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  100 20V o = 125 C J SAFE OPERATING AREA 10 100 1000 V , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA www.irf.com 10000 ...

Page 7

... Clamped Inductive Load Test Circuit D river* 50V 1000V www.irf.com 960V R Fig. 13b - . ff t=5µ IRG4PH40K 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PH40K Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) 80%( 20V 10µ CES GE (See fig. 13a) Case Outline and Dimensions — TO-247AC (. (. (. (. (. (. (. (. (. (. (. (. CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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