IRG4BC40K International Rectifier, IRG4BC40K Datasheet

IGBT UFAST 600V 42A TO-220AB

IRG4BC40K

Manufacturer Part Number
IRG4BC40K
Description
IGBT UFAST 600V 42A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC40K

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC40K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC40K
Manufacturer:
IR
Quantity:
3 090
Part Number:
IRG4BC40K
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC40KPBF
Manufacturer:
IR
Quantity:
5 311
Company:
Part Number:
IRG4BC40KPBF
Quantity:
9 000
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
Features
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Short Circuit Rated UltraFast: optimized for high
• Generation 4 IGBT design provides higher efficiency
• Industry standard TO-247AC package
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
sc
Rated to 10µs @ 125°C, V
operating frequencies >5.0 kHz , and Short Circuit
than Generation 3
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
GE
= 15V
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case)
2 (0.07)
Typ.
0.50
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to +150
Max.
TO-220AB
600
±20
160
42
25
84
84
10
15
65
Short Circuit Rated
@V
V
CE(on) typ.
Max.
V
GE
0.77
UltraFast IGBT
–––
–––
80
CES
= 15V, I
= 600V
= 2.1V
C
Units
= 25A
4/17/2000
g (oz)
°C/W
Units
mJ
µs
°C
W
V
A
V
1

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IRG4BC40K Summary of contents

Page 1

Features Features Features Features Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125° 15V GE • Generation 4 IGBT design provides higher efficiency than Generation ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of ...

Page 3

lta Ide ...

Page 4

T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 ...

Page 5

1MHz ies res gc 2500 oes ce gc 2000  C ies 1500 1000 500  ...

Page 6

R = 10Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical ...

Page 7

L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

Page 8

(. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (.6 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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