IRG4BC40K International Rectifier, IRG4BC40K Datasheet - Page 2

IGBT UFAST 600V 42A TO-220AB

IRG4BC40K

Manufacturer Part Number
IRG4BC40K
Description
IGBT UFAST 600V 42A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC40K

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC40K

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E
Notes:
Q
R
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
ts
sc
d(on)
r
d(off)
f
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ies
oes
res
g
ge
gc
(BR)CES
2
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 10Ω,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
7.0
18
10
S
T
U
1600
0.62
0.33
0.95
0.46
2.10
2.70
2.14
120
140
140
190
150
130
-13
1.9
14
16
51
30
15
30
18
13
55
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2000
±100
250
180
210
210
2.6
6.0
2.0
1.4
24
77
mV/°C V
V/°C
µA
mJ
mJ
nA
nC
nH
ns
µs
pF
V
ns
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
CC
GE
GE
CC
GE
GE
GE
CC
C
C
C
= 25A
= 25A, V
= 25A, V
= 25°C
= 150°C,
= 25A
= 42A
= 25A , T
= V
= V
= 100 V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 400V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
C
C
CE
CE
CC
CC
CE
J
= 250µA
= 1.0A
= 1.0mA
= 250µA
= 250µA
= 150°C
G
G
G
C
= 600V, T
= 10V, T
J
= 600V
= 480V
= 480V
= 25A
= 10Ω
= 10Ω , V
= 10Ω
= 125°C
See Fig.8
See Fig. 7
J
J
= 25°C
V
See Fig.2, 5
www.irf.com
= 150°C
CPK
GE
= 15V
< 500V

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