IGBT UFAST 600V 16A RIGHT D2PAK

 

IRG4BC20KD-STRR

Manufacturer Part NumberIRG4BC20KD-STRR
DescriptionIGBT UFAST 600V 16A RIGHT D2PAK
ManufacturerInternational Rectifier
IRG4BC20KD-STRR datasheets

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Specifications of IRG4BC20KD-STRR

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.8V @ 15V, 9A
Current - Collector (ic) (max)16APower - Max60W
Input TypeStandardMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-  
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
2
• Industry standard D
Pak package
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible.
TM
•HEXFRED
diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
• For hints see design tip 97003.
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
t
Short Circuit Withstand Time
sc
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
R
Junction-to-Case - IGBT
JC
R
Junction-to-Case - Diode
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient ( PCB Mounted,steady-state)U
JA
Wt
Weight
www.irf.com
IRG4BC20KD-S
= 15V
GE
G
TM
ultrafast,
n-ch an nel
300 (0.063 in. (1.6mm) from case)
PD -91598A
Short Circuit Rated
UltraFast IGBT
C
V
= 600V
CES
V
2.27V
CE(on) typ.
@V
= 15V, I
= 9.0A
GE
C
E
2
D P a k
Max.
Units
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
10 lbf•in (1.1 N•m)
Typ.
Max.
Units
–––
2.1
2.5
0.5
–––
°C/W
–––
40
1.44
–––
4/24/2000
V
A
µs
V
W
°C
g
1

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IRG4BC20KD-STRR Summary of contents

  • Page 1

    ... Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient ( PCB Mounted,steady-state Weight www.irf.com IRG4BC20KD-S = 15V ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) PD -91598A Short Circuit Rated UltraFast IGBT 600V CES V 2.27V CE(on) typ. ...

  • Page 2

    ... IRG4BC20KD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

  • Page 3

    ... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 Fig Typical Transfer Characteristics IRG4BC20KD-S For both: D uty cy cle: 50 125° 90°C 55°C s ink G ate drive as specified Dis sip ation = 1 50V CC 5µs PULSE WIDTH ...

  • Page 4

    ... IRG4BC20KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

  • Page 5

    ... G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4BC20KD-S = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage = Ohm 50 = 15V = 480V  9. 4 100 120 140 160 ° Junction Temperature ( Junction Temperature 40 ...

  • Page 6

    ... IRG4BC20KD Ohm 150 C ° 480V 15V GE 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6  100 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Fo rwa rd V oltage D rop - V ...

  • Page 7

    ... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4BC20KD ° ° 4 / /µ ° ° . 8 / /µs) f /dt vs. di /dt (rec / ...

  • Page 8

    ... IRG4BC20KD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...

  • Page 9

    ... µ Tape & Reel Information 2 D Pak (. (. 0. AX EIA SIO LIM EAS IST www.irf.com D .U D.U. 480V 1 1 5 5 1 1 3. 2. 62) 3 0.4 0 ( IRG4BC20KD-S 480V @25° ...

  • Page 10

    ... IRG4BC20KD-S Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot. U When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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