IRG4RC10KD International Rectifier, IRG4RC10KD Datasheet
IRG4RC10KD
Specifications of IRG4RC10KD
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IRG4RC10KD Summary of contents
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... When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com = 15V ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) 0.3 (0.01) PD 91736A IRG4RC10KD Short Circuit Rated UltraFast IGBT 600V CES V = 2.39V CE(on) typ 15V ...
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... IRG4RC10KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance „ Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 ° 10 ° 150 15V 1 5 5.0 6.0 7.0 Fig Typical Transfer Characteristics IRG4RC10KD For both: D uty cy cle: 50 125° 90° ink G ate drive as specified Dis sip ation = 1 ° ° ...
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... IRG4RC10KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 -60 -40 -20 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 480V CC 1 0.1 -60 -40 -20 80 100 ( Fig Typical Switching Losses vs. IRG4RC10KD = 400V = 5. Total Gate Charge (nC) G Gate-to-Emitter Voltage = Ohm 50 = 15V 2 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
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... IRG4RC10KD 2 Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 SAFE OPERATING AREA 150° 125° 25°C J 0.0 1.0 2.0 3.0 4.0 5 ...
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... Fig Typical Reverse Recovery vs 25° 5° 8. 4. /dt - (A/µ Fig Typical Stored Charge vs. di www.irf.com ° 5° Fig Typical Recovery Current vs ° 5° 8. 4. /dt Fig Typical di f IRG4RC10KD /dt - (A/µ / /dt - (A/µ /dt vs. di /dt, (rec ...
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... IRG4RC10KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device as D .U. . 90% 10 d(off) f d(on) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Ic dt ...
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... D.U. 480V Figure 20. Pulsed Collector Current 2 2 45 50) 0.58 (. 35) 0.46 (.01 8) 6.45 (.24 5) 5.68 (. .42 (.41 0) 9 0.51 (. (.0 23 (.0 18 SIO & 82 ING 252 SIO 0.16 (. IRG4RC10KD Test Circuit 480V @25°C C Test Circuit LEAD ASSIGNMENTS GATE COLLECTOR 3 - EMITTER 4 - COLLECTOR 9 ...
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... IRG4RC10KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot. Tape & Reel Information TO-252AA & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...