IRG4BC30FD1 International Rectifier, IRG4BC30FD1 Datasheet
IRG4BC30FD1
Specifications of IRG4BC30FD1
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IRG4BC30FD1 Summary of contents
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... Weight www.irf.com G n-channel Parameter c d 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– 94773 IRG4BC30FD1 Fast CoPack IGBT C CES = CE(on) typ TO-220AB Max. Units 600 31 17 120 ...
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... IRG4BC30FD1 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T = 25°C J 100 T = 150° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE www.irf.com RMS 1000 100 10 = 15V IRG4BC30FD1 150° 25° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...
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... IRG4BC30FD1 Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 2 15V GE 2.0 1.5 1.0 100 125 150 -60 0.001 0. Rectangular Pulse Duration (sec 15V GE 80µs PULSE WIDTH 17A 8.5A C -40 - 100 120 140 160 T , Junction Temperature (° ...
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... 25°C 1900 17A 1800 1700 1600 Gate Resistance (Ω) www.irf.com 100 1000 9000 22Ω 8000 15V 480V 7000 6000 5000 4000 3000 2000 1000 -60 -40 -20 IRG4BC30FD1 V = 400V 17A Total Gate Charge (nC) Ã 34A 17A 8. 100 120 140 160 Juntion Temperature (° ...
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... IRG4BC30FD1 8000 22Ω 7000 150° 480V 6000 15V 5000 4000 3000 2000 1000 Collecto-to-Emitter (A) 6 1000 100 100 175˚ 150˚ 25˚ 0 20V 125°C J SAFE OPERATING AREA 10 100 V , Collector-to-Emitter Voltage ( www.irf.com 1000 ...
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... 16A 1200 J 1000 800 600 400 200 0 100 200 300 400 500 600 700 800 900 1000 f IRG4BC30FD1 = 390V = 25°C _____ = 125°C ---------- F = 16A /dt (A/µ 390V = 25°C _____ = 125°C ---------- 16A /dt (A/µs) (rec ...
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... IRG4BC30FD1 430µF 80% of Vce LM on off(diode 10% +Vg Vce 10% Ic Vcc 90 Vce tr td(on Same type device as +Vge D.U.T. D.U.T. Ic td(off) rr d(on) r d(off) f GATE VOLTAGE D.U.T. Ic +Vg DUT VOLTAGE AND CURRENT Vpk Ipk Ic t2 Vce ie dt Eon = t1 DIODE REVERSE t2 RECOVERY ENERGY d(on) ...
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... Fig.18e - Macro Waveforms for L 1000V 50V 6000µF 100V Fig Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. Fig Pulsed Collector Current IRG4BC30FD1 Test Circuit L C Test Circuit 9 ...
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... IRG4BC30FD1 Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...