STGW33IH120D STMicroelectronics, STGW33IH120D Datasheet

no-image

STGW33IH120D

Manufacturer Part Number
STGW33IH120D
Description
IGBT 30A 1200V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW33IH120D

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-8440-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGW33IH120D
Manufacturer:
ST
0
Features
Applications
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. This device is well suited for the
resonant or soft switching application.
Table 1.
March 2008
Low saturation voltage
High current capability
Low switching loss
Very soft ultra fast recovery antiparallel diode
Induction cooking, microwave oven
Soft switching application
STGW33IH120D
Order code
Device summary
GW33IH120D
Marking
Rev 1
Figure 1.
30 A - 1200 V - very fast IGBT
Package
TO-247
Internal schematic diagram
STGW33IH120D
TO-247
1
2
3
Packaging
Tube
www.st.com
1/14
14

Related parts for STGW33IH120D

STGW33IH120D Summary of contents

Page 1

... This device is well suited for the resonant or soft switching application. Table 1. Device summary Order code STGW33IH120D March 2008 1200 V - very fast IGBT Figure 1. Marking Package GW33IH120D TO-247 Rev 1 STGW33IH120D TO-247 Internal schematic diagram Packaging Tube www.st.com 1/14 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STGW33IH120D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...

Page 3

... STGW33IH120D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Collector-emitter voltage (V CES (1) Collector current (continuous ° (1) Collector current (continuous) at 100 ° (2) Turn-off latching current I CL (3) Pulsed collector current Gate-emitter voltage GE P Total dissipation at T TOT I Diode RMS forward current Surge non repetitive forward current t ...

Page 4

... Gate-collector charge Q gc 4/14 Parameter Test conditions =1200 =1200 V, Tc=125 ° =± Parameter Test conditions MHz 960 A STGW33IH120D Min. Typ. Max. Unit 1200 = =125 ° Min. Typ. Max. 2900 =0 162 GE 30 127 5.75 V 500 µ ± nA 100 S Unit ...

Page 5

... STGW33IH120D Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Off voltage rise time r off Turn-off delay time d off Current fall time ...

Page 6

... Reverse recovery current I rrm t Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I rrm 6/14 Parameter Test conditions di/dt = 100 A/µs (see Figure 20 125 °C, di/dt = 100 A/µs (see Figure 20) STGW33IH120D Min. Typ. Max. 1.9 = 125 °C 1 235 5 152 722 9 Unit ...

Page 7

... STGW33IH120D 2.1 Electrical characteristics (curves) Figure 2. Output characteristics 250 200 150 100 Figure 4. Transconductance Figure 6. Gate charge vs gate-source voltage Figure =960V CC I =20A 100 Figure 3. HV42580 I (A) C 300 12 V 250 11 V 200 10 V 150 9 V 100 (V) CE Figure 5. HV42590 ...

Page 8

... Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector 8/14 Figure 9. HV42610 V CE(sat) 2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 100 125 150 T (°C) J Figure 11. Switching losses vs temperature HV42640 (°C) J STGW33IH120D Collector-emitter on voltage vs collector current HV42650 (V) T =125° =-50° =25° current I (A) ...

Page 9

... STGW33IH120D Figure 14. Thermal impedance Figure 16. Emitter-collector diode characteristics I (A) FM 100 90 T =150°C j (typical values =150° (maximum values 0.0 0.5 1.0 1.5 2.0 2.5 Figure 15. Turn-off SOA I ( 0.1 T =25°C j (maximum values) (V) 3.0 3.5 4.0 4.5 Electrical characteristics 1 10 100 ...

Page 10

... Test circuit 3 Test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveform 10/14 Figure 18. Gate charge test circuit Figure 20. Diode recovery time waveform STGW33IH120D ...

Page 11

... STGW33IH120D 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 12

... Package mechanical data Dim øP øR S 12/14 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 STGW33IH120D Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 13

... STGW33IH120D 5 Revision history Table 9. Document revision history Date 12-Mar-2008 Revision 1 Initial release Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STGW33IH120D ...

Related keywords